STL16N65M5 N-channel 650 V, 0.270 , 12 A PowerFLATTM 8x8 HV MDmeshTM V Power MOSFET Features Order code VDSS @ TJmax RDS(on) max 710 V < 0.299 STL16N65M5 ID 3 3 12 A (1) "OTTOM VIEW 3 ' $ 1. The value is rated according to Rthj-case 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 0OWER&,!4 X (6 Applications Switching applications Description Figure 1. This device is an N-channel MDmeshTM V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics' well-known PowerMESHTM horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Internal schematic diagram $ ' 3 !-V Table 1. Device summary Order code Marking Package Packaging STL16N65M5 16N65M5 PowerFLATTM 8x8 HV Tape and reel November 2011
STL16N65M5 N-channel 650 V, 0.270 , 12 A PowerFLATTM 8x8 HV MDmeshTM V Power MOSFET Features Order code VDSS @ TJmax RDS(on) max 710 V < 0.299 STL16N65M5 ID 3 3 12 A (1) "OTTOM VIEW 3 ' $ 1. The value is rated according to Rthj-case 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 0OWER&,!4 X (6 Applications Switching applications Description Figure 1. This device is an N-channel MDmeshTM V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics' well-known PowerMESHTM horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Internal schematic diagram $ ' 3 !-V Table 1. Device summary Order code Marking Package Packaging STL16N65M5 16N65M5 PowerFLATTM 8x8 HV Tape and reel November 2011