IRF7821GPBF HEXFET(R) Power MOSFET Applications l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l Lead-Free l Halogen-Free VDSS RDS(on) max Qg(typ.) 30V 9.1mW@VGS= 10V 9.3nC A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Absolute Maximum Ratings Parameter Max. VDS Drain-to-Source Voltage 30 VGS Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V 20 13.6 IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current 100 PD @TA = 25C Power Dissipation 2.5 ID @ TA = 25C ID @ TA = 70C f f PD @TA = 70C TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range V 11 c Power Dissipation Units A W 1.6 W/C 0.02 -55 to + 155 C Thermal Resistance Parameter RJL Junction-to-Drain Lead RJA Junction-to-Ambient Notes through www.irf.com f g Typ. Max. --- 20 --- 50 Units C/W are on page 10 1 07/09/09 IRF7821GPB