Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FQPF9N25C / FQPF9N25CT N-Channel QFET(R) MOSFET 250 V, 8.8 A, 430 m Features Description * 8.8 A, 250 V, RDS(on) = 430 m (Max.) @ VGS = 10 V, ID = 4.4 A These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls. * Low Gate Charge (Typ. 26.5 nC) * Low Crss (Typ. 45.5 pF) * 100% Avalanche Tested D G G D S TO-220F
FQPF9N25CT N-Channel QFET(R) MOSFET 250 V, 8.8 A, 430 m Features Description * 8.8 A, 250 V, RDS(on) = 430 m (Max.) @ VGS = 10 V, ID = 4.4 A These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls. * Low Gate Charge (Typ. 26.5 nC) * Low Crss (Typ. 45.5 pF) * 100% Avalanche Tested D G G D S TO-220F S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage Parameter ID Drain Current IDM Drain Current VGSS Gate to Source Voltage FQPF9N25C / FQPF9N25CT 250 - Continuous (TC = 25oC) - Continuous (TC = 100
to top Features z z z z z z 8.8A, 250V, RDS(on) = 0.43@VGS = 10V Low gate charge (typical 26.5 nC) Low Crss (typical 45.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability back to top Product status/pricing/packaging mhtml:file://C:\TEMP\FQPF9N25CT.mht 17-Aug-2007 Product Folder - Fairchild P/N FQPF9N25C - 250V N-Channel Advance Q-FET C-Series Product Product status FQPF9N25C Full Production FQPF9N25CT Full Production Pb-free Status Pricing* Page 2 of 2 Package type Leads Packing method Package Marking Convention** $0.78 TO-220F 3 RAIL Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &4 (4-Digit Date Code) Line 2: FQPF Line 3: 9N25C $0.81 TO-220F 3 RAIL Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &4 (4-Digit Date Code) * Fairchild 1,000 piece Budgetary Pricing ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples Indicates produc