-212 3-212 3-212 3-212 3-206 3-206 -- BDW57 BDW58 BDW59 BDW60 BDW63 BDW63A BDW63B BD137 BD138 BD139 BD140 BDX53B BDX53B BDX53B 3-158 3-160 3-158 3-160 3-221 3-221 3-221 3-208 3-208 3-208 -- 3-208 3-208 3-208 BDW63C BDW63D BDW64 BDW64A BDW64B BDW64C BDW73D BDX53C BDX53D BDX54B BDX54B BDX54B BDX54C BDX33D 3-221 -- 3-221 3-221 3-221 3-221 -- BDV64A BDV64B BDV64C BDV65 BDV65A BDV65B BDV65C BDV64B BDV64B BDV66C BDV66D BDV67D BDV91 BDV92 BDV93 BDV94 MJH11018 MJH11019 MJH11020 MJE3055T TIP34B TIP34C TIP2955 3-825 3-825 3-825 3-628 3-877 3-877 3-908 BDW74D BDW83 BDW83A BDW83B BDW83C BDW84 BDW84A BDX34D BDV65A BDV65A BDV65A BDV65B BDV64A BDV64A -- -- -- -- 3-208 -- -- BDV95 BDV96 BDW21 BDW21A BDW21B BDW21C BDW22 TIP33B TIP33C 2N3716 2N3716 2N3716 2N3792 3-877 3-877 3-12 3-12 3-12 3-77 3-25 BDW84B BDW84C BDW93C BDW94B BDW94C BDX10 BDX10-4 BDV64A BDV64B BDW42 BDW46 BDW47 2N3055A 2N3055A -- 3-208 3-212 3-212 3-212 3-5 3-5 BDW22B BDW22C BDW23 BDW23A BDW23B BDW23C BDW24 2N3792 2N5880 BDX53B BDX53B BDX53B
BDX53C PNP . . . designed for general-purpose amplifier and low-speed switching applications. BDX54B * High DC Current Gain -- hFE = 2500 (Typ) @ IC = 4.0 Adc * Collector Emitter Sustaining Voltage -- @ 100 mAdc VCEO(sus) = 80 Vdc (Min) -- BDX53B, 54B VCEO(sus) = 100 Vdc (Min) -- BDX53C, 54C * Low Collector-Emitter Saturation Voltage -- VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc * Monolithic Construction with Built-In Base-Emitter Shunt Resistors * TO-220AB Compact Package BDX54C DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80 - 100 VOLTS 65 WATTS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIIIIII III IIII IIII IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIII
DV64B 3-324 BDW58 BD138 3-260 BOV65 BDV65 3-324 BDW59 BD139 3-258 BOVE5A BDVE5A 3-324 BDW60 BD140 3-260 BDV65B BDV65B 3-324 BOW63 BDX53 3-338 BOV65C BOV65B 3-324 BDW63A BDX53A 3-338 BDV66C MJH11018 3-1034 BDW63B BDX53B 3-338 BDVE66C MJH11017 3-1034 BDW63C BDX53C 3-338 BDV6ED MJH11019 3-1034 BDW63D BDX53D 3-338 BDV67D MJH11020 3-1034 BDWw4 BDX54 3-338 BOV91 MJE3055T 3-904 BDW64A BDX54A 3-338 BDV92 TIP34B 3-1077 BDW64B BDX54B 3-338 BDV93 TIP34C 3-1077 BOW64C BOX54C 3-338 BDV94 TIP2955 3-1108 BDW73 BD895 3-320 BDV95 TIP33B 31077 BOW73A 8D897 3-320 BOV9E TIP33C 3-1077 BDW73B BD899 3-320 BDW21 2N3714 3-26 BDW73C BD901 3-320 BOW21A 2N3714 3-26 BDW73D BDX33D 3-334 BOW21B 2N3714 3-26 BOW?74 BD896 3.322 BDW21C 2N5882 3-123 BDW74A BD898 3-322 BDW22 2N3789 3-56 BDW74B BD900 3-322 BDW22A 2N3789 3-56 BDW74C BD902 3-322 BDW22B 2N3790 3-56 BDW74D BDX34D 3-334 BDW22C 2N5880 3-123 BDW83 BDV65 3-324 BDW23 BDX53 3-338 BDW83A BOVES 3-324 BDW23A BDX53A 3-338 BOW83B BDVE5A 3-324 BOW23B BDX53B 3-338 BDW83C BDV65B 3-324
559 2N6569 2N6573 2N6574 2N6575 2N6576 2N6577 2N6594 2N6648 2N6649 2N6666 2N6667 2N6668 SGS-THOMSON SGS-THOMSON NEAREST PREFERRED , ,,, BDW51 BDW51A BDW51B BD711 BD712 2N6486 2N6487 2N6488 2N6489 2N6490 2N6491 BUX10 MJE13005 BUW34 BUW34 BUW34 BUW34 TIP101 BDX53C BDX53C TIP102 TIP102 BUX48A 2N6545 2N6547 2N6547 MJE800 MJE800 2N4923 2N4923 2N4923 2N4919 2N4919 MJE340 MJE340 MJE340 BDW51 2N6547 2N6547 BUW45 2N6577 2N6577 BDW52 BDX88 BDX88A BDX54 BDX54A 2N6668 BDW51C BDW51C BDW51C BD711 BD712 2N6486 2N6487 2N6488 2N6489 2N6490 2N6491 BUX10 MJE13005 BUW34 BUW34 BUW34 BUW34 TIP102 BDX53C BDX53C TIP102 TIP102 BUX48A BUX47 2N6547 2N6547 MJE802 MJE802 2N4923 2N4923 2N4923 2N4919 2N4919 MJE340 MJE340 MJE340 BDW51C 2N6547 2N6547 BUW45 2N6577 2N6577 BDW52C BDX88B BDX88B BDX54B BDX54B TIP106 2N6673 2N6675 2N6676 2N6677 2N6678 2N6702 2N6935 2NS671 2NS672 2NS684 2NS974 2S3569 2S8514 2S8521 2S8531 2S8579 2SA489 2SA490 2SA496 2SA505 2SA607 2SA623 2SA624 2SA626 2SA627 2SA633
BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general-purpose amplifier and low-speed switching applications. Features *High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc *Collector Emitter Sustaining Voltage - @ 100 mAdc VCEO(sus) = 80 Vdc (Min) - BDX53B, 54B VCEO(sus) = 100 Vdc (Min) - BDX53C, 54C *Low Collector-Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc *Monolithic Construction with Built-In Base-Emitter Shunt Resistors *Pb-Free Packages are Available* IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIII III IIII III IIIIIIIIIIII III IIII III IIIIIIIIIIII III IIII III IIIIIIIIIIII III IIII III IIIIIIIIIIII III IIII III IIIIIIIIIIII III IIII III IIIIIIIIIIII III IIII III IIIIIIIIIIII III IIII III IIIIIIIIIIII III IIII III IIIIIIIIIIII III IIII III IIIIIIIIIIII III IIII III IIIIIIIIIIII III IIII III IIIIIIIIIIIIIIIIIII IIIIIIIIIIII III IIII III
BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general-purpose amplifier and low-speed switching applications. Features * High DC Current Gain - hFE = 2500 (Typ) @ IC = 4.0 Adc * Collector Emitter Sustaining Voltage - @ 100 mAdc * * * VCEO(sus) = 80 Vdc (Min) - BDX53B, 54B VCEO(sus) = 100 Vdc (Min) - BDX53C, 54C Low Collector-Emitter Saturation Voltage - VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc Monolithic Construction with Built-In Base-Emitter Shunt Resistors These Devices are Pb-Free and are RoHS Compliant* www.onsemi.com DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80-100 VOLTS, 65 WATTS 4 IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII III IIII III IIIIIIIIIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIIII IIIIIII IIIIIII III IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII
BDX53C PNP BDX54B . . . designed for general-purpose amplifier and low-speed switching applications. BDX54C * High DC Current Gain -- * * * * hFE = 2500 (Typ) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage -- @ 100 mAdc VCEO(sus) = 80 Vdc (Min) -- BDX53B, 54B = 100 Vdc (Min) -- BDX53C, 54C Low Collector-Emitter Saturation Voltage -- VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc = 4.0 Vdc (Max) @ IC = 5.0 Adc Monolithic Construction with Built-In Base-Emitter Shunt Resistors TO-220AB Compact Package IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIIIIII III IIII IIII IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII II
p 3.0 4.0 (Note 8.) 75 TIP100 (Note 9.) TIP105 (Note 9.) 1k/20k 4.0 (Note 8.) 80 BDX53B (Note 9.) BDX54B (Note 9.) 750 min 4.0 (Note 8.) 60 TIP101 (Note 9.) TIP106 (Note 9.) 1k/20k 4.0 (Note 8.) 80 2N6045 (Note 9.) 2N6042 (Note 9.) 1k/10k 4.0 (Note 8.) 75 BDX53C (Note 9.) BDX54C (Note 9.) 750 min TIP102 (Note 9.) TIP107 (Note 9.) 1k/20k 120 MJE15028 MJE15029 20 min 150 MJE15030 MJE15031 20 min 200 min 4.0 80 100 300/600 MJE5740 (Note 9.) 3.0 1.5 typ 1.5 typ 1.5 typ 3.0 3.0 3.0 3.0 1.5 typ 1.5 typ 1.5 typ 1.5 typ 3.0 3.0 98 704 203 704 98 3.0 203 3.0 1.5 typ 4.0 (Note 8.) 80 4.0 30 50 492 4.0 30 50 492 4.0 80 8.0 typ 1.5 typ 2.0 typ 3.0 6.0 704 585 300 MJE5850 15 min 2.0 2.0 0.5 4.0 80 590 350 MJE5851 15 min 2.0 2.0 0.5 4.0 80 590 MJE5742 (Note 9.) 200 min 4.0 8.0 typ 2.0 typ 6.0 80 MJE13007 5/30 5.0 3.0 0.7 5.0 80 474 15 min 2.0 2.0 0.5 4.0 80 590 400 585 MJE5852 8. |hFE| @ 1.0 MHz 9. Darlington 10. Switching tests performed with special application simulator circuit. See data sheet for details.
BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general-purpose amplifier and low-speed switching applications. Features * High DC Current Gain - hFE = 2500 (Typ) @ IC = 4.0 Adc * Collector Emitter Sustaining Voltage - @ 100 mAdc * * * VCEO(sus) = 80 Vdc (Min) - BDX53B, 54B VCEO(sus) = 100 Vdc (Min) - BDX53C, 54C Low Collector-Emitter Saturation Voltage - VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc Monolithic Construction with Built-In Base-Emitter Shunt Resistors Pb-Free Packages are Available* IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII III IIII III IIIIIIIIIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIIII IIIIIII IIIIIII III IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII
BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general-purpose amplifier and low-speed switching applications. Features * High DC Current Gain - * * * * hFE = 2500 (Typ) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage - @ 100 mAdc VCEO(sus) = 80 Vdc (Min) - BDX53B, 54B VCEO(sus) = 100 Vdc (Min) - BDX53C, 54C Low Collector-Emitter Saturation Voltage - VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc Monolithic Construction with Built-In Base-Emitter Shunt Resistors Pb-Free Packages are Available* IIIIIIIIIIIIIIIIIII IIIIIIIIIIII III IIII III IIIIIIIIIIIIIIIIIII IIIIIIIIIIII III IIII III IIIIIIIIIIII III IIII III III IIII IIIIIIIIIIII III IIIIIIIIIIII III IIII III III IIII IIIIIIIIIIII III IIIIIIIIIIII III IIII III IIIIIIIIIIII III IIII III IIIIIIIIIIII III IIII III IIIIIIIIIIII III IIII III III IIII IIIIIIIIIIII III IIIIIIIIIIIIIIIIIII IIIIIIIIIIII III IIII III IIIIIIIIIIII III
BDX53C BDX54B - BDX54C Complementary power Darlington transistors Features Good hFE linearity High fT frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application 3 1 Audio amplifiers Linear and switching industrial equipment 2 TO-220 Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Table 1. Figure 1. Internal schematic diagram R1 typ.= 10 k R2 typ.= 150 Package Packaging TO-220 Tube Device summary Order code Marking BDX53B BDX53B BDX53C BDX53C BDX54B BDX54B BDX54C BDX54C October 2007 Rev 4 1/7 www.st.com 7 Electrical ratings 1 BDX53B - BDX53C - BDX54B - BDX54C Electrical ratings Table 2. Absolute maximum ratings Value Symbol BDX53B BDX53C PNP BDX54B BDX54C Unit Collector-base voltage (IE = 0) 80 100 V VCEO Collector-emitter voltage (IB = 0) 80 100 V VEBO Emitter-base voltage (IC = 0) 5 V Collector current 8 A Collector peak curre
Silicon Transistors ... designed for general-purpose amplifier and low-speed switching applications. High DC Current Gain hFE = 2500 (Typ) @ Ic = 4.0 Adc Collector Emitter Sustaining Voltage @ 100 mAdc VCEO(sus) = 80 Vde (Min) BDX53B, 54B = 100 Vde (Min) BDX53C, 54C TO-220AB Compact Package MAXIMUM RATINGS Low Collector-Emitter Saturation Voltage VCE(sat) = 2.0 Vde (Max) @ I = = 4.0 Vde (Max) @ Ic = Monolithic Construction with Built-In BaseEmitter Shunt Resistors 3.0 Adc 5.0 Adc NPN BDX53B BDX53C PNP BDX54B BDX54C DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80-100 VOLTS 65 WATTS y iy CASE 221A-06 TO-220AB BDX53B BDX53C Rating Symbol | BDX54B | BDX54C Unit CollectorEmitter Voltage VCEO 80 100 Vde CollectorBase Voltage VcB 80 100 Vde Emitter-Base Voltage VEB 5.0 Vde Collector Current Continuous Io 8.0 Adc Peak 12 Base Current IB 0.2 Adc Total Device Dissipation @ Tc = 25C Pp 60 Watts Derate above 25C 0.48 WiC Operating and Storage Junction TY: Tstg 65 to
BDX53C PNP BDX54B . . . designed for general-purpose amplifier and low-speed switching applications. BDX54C * High DC Current Gain -- * * * * hFE = 2500 (Typ) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage -- @ 100 mAdc VCEO(sus) = 80 Vdc (Min) -- BDX53B, 54B = 100 Vdc (Min) -- BDX53C, 54C Low Collector-Emitter Saturation Voltage -- VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc = 4.0 Vdc (Max) @ IC = 5.0 Adc Monolithic Construction with Built-In Base-Emitter Shunt Resistors TO-220AB Compact Package IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIIIIII III IIII IIII IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII II
BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors http://onsemi.com . . . designed for general-purpose amplifier and low-speed switching applications. DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80-100 VOLTS 65 WATTS * High DC Current Gain - * * * * hFE = 2500 (Typ) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage - @ 100 mAdc VCEO(sus) = 80 Vdc (Min) - BDX53B, 54B VCEO(sus) = 100 Vdc (Min) - BDX53C, 54C Low Collector-Emitter Saturation Voltage - VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc Monolithic Construction with Built-In Base-Emitter Shunt Resistors TO-220AB Compact Package IIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII IIII IIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII IIII IIII IIIIIIIIIII IIII IIII IIII IIIIIIIIIII IIII IIII IIII IIIIIIIIIII IIII IIII IIII IIIIIIIIIII IIII IIII IIII IIIIIIIIIII IIII IIII IIII IIIIIIIIIII IIII IIII IIII IIIIIIIIIII IIII IIII IIII IIIIIIIIIII IIII IIII IIII IIII
BDX53C NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK MAY 1989 - REVISED MARCH 1997 @ Designed for Complementary Use with BDX54, BDX54A, BDX54B and BDX54C TO-220 PACKAGE (TOP VIEW) 60 W at 25C Case Temperature 8 A Continuous Collector Current Minimum hg of 750 at 3 V,3 A C) Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT BDX53 45 BDX53A 60 Collector-base voltage (Ip = 0) BDX53B Veso 80 Vv BDX53C 100 BDX53 45 . BDX53A 60 Collector-emitter voltage (lg = 0) BDX53B VcEo 80 Vv BDX53C 100 Emitter-base voltage VeBo 5 Vv Continuous collector current lo 8 A Continuous base current lp 0.2 A Continuous device dissipation at (or below) 25C case temperature (see Note 1) Prot 60 Ww Continuous device dissipation at (or below) 25C free air temperature (see Note 2) Prot 2 Ww Operating junction temperature range Tj -65 to +150 C Operating temperatu