Vdd A1 21 A0 20 A1 (/OFF) 36 Vdd 59 Vdd 100n 0VA A0 TC58FVB004-10 C122 100n 0VA A0 U104 100n 0VA U102 100n A0 97 A1/IAD0 98 + C136 C137 C121 0VA 15 Vdd 18 Vdd ADSP2185L-133 9 3N3 49 I/O_28 (ADD17) 3N3 NO_CONNECT (SDOUT)79 0VA 3N3 R5 47k 1 3 PTT_IN 10 D7A BAT54SW EMS PTT 10 EE EBG EBR 6 ECLK & 4 0VA 5 0VA NOT FITTED E101 74HC132PW 0VA /BR /BG ELIN EINT 60651026.cdr rev6 U100B ELOUT 11 & 12 0VA 13 0VA U100D 74HC132PW 0VA 6 1 7 U105B LM239 E100 PWB Figure 6-2 DSP and FGPA Schematic TNM-M-E-0001 Page 43 DRAFT D Q350 C356 R368 100n D1 0VA 1 0VA 1SMC17AT3 BSP090 C354 C350 100n 100n 0VA 1 IN 0VA 0VA 10k 22u 16V Q307 BC859CW R329 10k L22 RX_PSU C339 R356 N.F. 100R 2 BAV99W 3 8V0 0VA D308B BAV99W L21 C351 + D308A +8V OUT 3 2 GND 4 GND FUSABLE LINK N.F. 0VA 13V8_SW FB TP2 LM2930S-8.0 13V8_UNSW_F + + C149 U310 TP1 L20 N.F. 3 10 L300 13V8_UNSW 13V8_UNSW 0VA 2 RX_PON C338 10n 0VA U311 R366 R350 R351 22k 4 IN 12R + 0VA 5 4 10 C359 R360 C361 R364 100n 100n 100k 0VA 3 GND R326 GND 6 10k 0VA R Q 2 TX_PON C336 S
BAT54SWT1G, NSVBAT54SWT1G Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features Extremely Fast Switching Speed Low Forward Voltage - 0.35 Volts (Typ) @ IF = 10 mAdc AEC Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Symbol Value Unit Reverse Voltage VR 30 V Forward Power Dissipation @ TA = 25C Derate above 25C PF 200 1.6 mW mW/C Forward Current (DC) IF 200 Max mA Rating Non-Repetitive Peak Forward Current tp < 10 msec IFSM Repetitive Peak Forward Current Pulse Wave = 1 sec, Duty Cycle = 66% IFRM http://onse
BAT54SWT1G, NSVBAT54SWT1G Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features * Extremely Fast Switching Speed * Low Forward Voltage - 0.35 Volts (Typ) @ IF = 10 mAdc * NSV Prefix for Automotive and Other Applications Requiring * www.onsemi.com 30 VOLT DUAL SERIES SCHOTTKY BARRIER DIODES Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Symbol Value Unit Reverse Voltage VR 30 V Forward Power Dissipation @ TA = 25C Derate above 25C PF 200 1.6 mW mW/C Forward Current (DC) IF 200 Max mA Rating Non-Repetitive Peak Forward Current tp < 10 msec IFSM Repetitive Pe
12 R345 10K 11 10 Open Lamps Protection 9 R351 2K GND Current information C319 SYNC_IN D313 100nF C321 R355 R356 C322 R353 100pF 20K 10K 1nF 10K C323 R357 100K 2.2nF C324 R358 R359 C325 47pF 18K 22K 10nF 3 C326 R354 R360 C327 10nF 2K 33K 690pF D314 VSNS1 BAT54SWT1 D315 2 2 1 2 BAV70LT1 R361 220 R362 220 Over Voltage Protection 3 1 1 R363 R364 22K 22K 3 VSNS2 CN306 4324-2S 1 LAMP 2 1 2 RTN BAT54SWT1 Figure 31: LX6503 Schematic and Control Signals 40 A typical application circuit is illustrated in Figure 31. A built in regulator is connected to pin 1 (VIN) to step down the input voltage to the internal operating voltage VDD (pin 16). The VIN of the device can range from 6 to 27 V dc. In this application, the VIN is directly supply from the +12 V dc through fuse resistor F301 to protect the system in the event of a short circuit. C307 and C308 provide low impedance filtering. VDD supplies both output gate drivers and the internal control circuitry. The nominal operating voltage of VDD
BAT54SWT1 Preferred Device Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. http://onsemi.com 30 VOLT DUAL SERIES SCHOTTKY BARRIER DIODES * Extremely Fast Switching Speed * Low Forward Voltage - 0.35 Volts (Typ) @ IF = 10 mAdc 1 ANODE 2 CATHODE 3 CATHODE/ANODE MARKING DIAGRAM MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Symbol Value Unit Reverse Voltage VR 30 Volts Forward Power Dissipation @ TA = 25C Derate above 25C PF 200 1.6 mW mW/C Forward Current (DC) IF 200 Max mA Junction Temperature TJ 125 Max C Tstg -55 to +150 C Rating Storage Temperature Range 3 3 B8 1 2 (SC-70) SOT-323 CASE 419 STYLE 9 1 2 ORDERING INFORMATION Device Package Shipping BAT54SWT1 SOT-323 3000/Tape & Reel Preferred devices are recom
BAT54SWT1G, NSVBAT54SWT1G Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features * Extremely Fast Switching Speed * Low Forward Voltage - 0.35 Volts (Typ) @ IF = 10 mAdc * NSV Prefix for Automotive and Other Applications Requiring * www.onsemi.com 30 VOLT DUAL SERIES SCHOTTKY BARRIER DIODES Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Symbol Value Unit Reverse Voltage VR 30 V Forward Power Dissipation @ TA = 25C Derate above 25C PF 200 1.6 mW mW/C Forward Current (DC) IF 200 Max mA Rating Non-Repetitive Peak Forward Current tp < 10 msec IFSM Repetitive Pe
BAT54SWT1G / BAT54CWT1G Schottky Diodes Connection Diagram BAT54SWT1G 3 BAT54CWT1G 3 1 2 1 3 2 1 2 MARKING SOT-323 BAT54SWT1G = YB BAT54CWT1G = YC Ordering Information Part Number Top Mark Package Packing Method BAT54SWT1G YB SC70 3L (SOT-323) Tape and Reel BAT54CWT1G YC SC70 3L (SOT-323) Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 30 V IF(AV) Average Rectified Forward Current 200 mA IFSM Non-Repetitive Peak Forward Surge Current Pulse Width = 1.0 second 600 mA TSTG Sto
47 BAT48 BAT48 BAT54 BAT54 BAT54 BAT54 BAT54 T/B BAT54A BAT54A BAT54A BAT54A BAT54AL BAT54AT BAT54AW BAT54AW BAT54C BAT54C BAT54C BAT54C BAT54CFILM BAT54C-GS08 BAT54CT BAT54CW BAT54CW BAT54H BAT54HT1 BAT54LT1 BAT54S BAT54S BAT54S BAT54S BAT54SFILM BAT54ST BAT54SW BAT54SW BAT54SW BAT54TW BAT54V BAT54W BAT54W BAT54WS BAT54WS BAT54WS T/R BAT54XV2 BAT60B BAT62-02L BAT62-02W BAT62-03W BAT64 BAT64-02V BAT64-02W BAT64-04 BAT64-04W BAT64-05 BAT64-05W BAT64-06 BAT64-06W BAT64-07 BAT64-07W BAT64W BAT65 BAT65 BAT66-05 BAT68 BAT68-04W BAT68-05W BAT68-06W DIODES INC. INFINEON ST MICROELECTRONICS VISHAY ZETEX DIODES INC. INFINEON INFINEON INFINEON DIODES INC. VISHAY VISHAY VISHAY VISHAY VISHAY INFINEON INFINEON ST MICROELECTRONICS ST MICROELECTRONICS ST MICROELECTRONICS DIODES INC. ST MICROELECTRONICS VISHAY DIODES INC. VISHAY DIODES INC. DIODES INC. ST MICROELECTRONICS VISHAY DIODES INC. VISHAY DIODES INC. ST MICROELECTRONICS ST MICROELECTRONICS VISHAY DIODES INC. INTERNATIONAL RECTI
BAT54SWT1G/BAT54CWT1G Schottky Diodes Connection Diagram BAT54SWT1G 3 BAT54CWT1G 3 1 2 3 2 1 MARKING SOT-323 2 1 BAT54SWT1G = YB BAT54CWT1G = YC Absolute Maximum Ratings * Symbol Ta = 25C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 30 V IF(AV) Average Rectified Forward Current 200 mA IFSM Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second 600 mA TSTG Storage Temperature Range -65 to +125 C TJ Operating Junction Temperature -65 to +125 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Value Unit PD Symbol Power Dissipation Parameter 232 mW RJA Thermal Resistance, Junction to Ambient 430 C/W FR-4 board (3.0 x 4.5 x 0.062" by 1.0 x 0.5" land pads) Electrical Characteristics Symbol TC = 25C unless otherwise noted Parameter Conditions Min. Max. Units 240 320 400 500 0.8 mV mV mV mV V VR Breakdown Voltage IR = 10A VF Forward Voltage IF
ber Peak Repetitive Reverse Voltage Forward Continuous Current ( ) Forward Voltage Drop Maximum Capacitance ( ) Reverse Current ( ) VRRM IFM VF @ IF V mA V mA A V pF (typ) IR @ VR Pin-out Config. CTOT 200mW Schottky Diodes / SOT-323 BAT54W BAT54AW BAT54CW BAT54SW 30 30 30 30 200 200 200 200 0.32 0.32 0.32 0.32 1.0 1.0 1.0 1.0 2.0 2.0 2.0 2.0 25 25 25 25 10 max 10 max 10 max 10 max Fig. 1 Fig. 2 Fig. 3 Fig. 4 BAS40W BAS40W-04 BAS40W-05 BAS40W-06 40 40 40 40 200 200 200 200 1.00 1.00 1.00 1.00 40 40 40 40 0.2 0.2 0.2 0.2 30 30 30 30 5.0 max 5.0 max 5.0 max 5.0 max Fig. 1 Fig. 4 Fig. 3 Fig. 2 BAS70W BAS70W-04 BAS70W-05 BAS70W-06 70 70 70 70 70 70 70 70 1.00 1.00 1.00 1.00 15 15 15 15 0.1 0.1 0.1 0.1 50 50 50 50 2.0 max 2.0 max 2.0 max 2.0 max Fig. 1 Fig. 4 Fig. 3 Fig. 2 Figure 1, Single Figure 2, Common Anode Figure 3, Common Cathode SOT-23 and SOT-323 ( ) Reference product datasheet for specific test conditions. 6FKRWWN\ 'LRGHV Figure 4, Series Type Number Peak Repetitive Reverse Voltage Forward Co
erature Number SLUA649 20 Submit Documentation Feedback Copyright (c) 2012, Texas Instruments Incorporated Product Folder Links: bq500410A Copyright (c) 2012, Texas Instruments Incorporated Product Folder Links: bq500410A 2 1 12V-IN DC in J2 N/C D7 C28 D3 BAT54SW D2 4 7 N/C C4 C26 C32 R37 76.8k 6 5 8 1 7 6 5 4 3 2 1 COMM+ R10 NoPop R33 76.8K R31 10.0K P1.5 P1.4 P1.3 P1.2 P1.1 P1.0 VCC 2700pF R40 100K 330pF MSP_MISO MSP_CLK 475 475 475 R9 R32 R3 NoPop C29 COMP VSENS PH BOOT U5 TPS54231D GND SS EN 0.01uF GND ties JP1 JP2 JP3 0.1uF 10uF 3 C25 STATUS C6 2 PILOT VIN 3V3_VCC 2 R4 3.16k C31 4.7nF R5 10.0K NTC 3V3_VCC 14 C11 4.7uF C33 MSP_TEST MSP_SYNC R13 10.0K COMM+ COMM- MSP_CLK MSP_RST 4.7nF MSP_MISO MSP_TEST I_SENSE 0.1uF C22 10.0K R25 RESET 1.0uF 37 COMM_A+ 38 COMM_A39 COMM_B+ 40 COMM_B- 18 MSP_CLK 21 DOUT_TX 22 DOUT_RX 6 FOD 7 MSP_RST/LED1 8 MSP_MISO/LED2 9 MSP_TEST 46 V_IN 45 V_SENSE 42 I_SENSE 3V3_VCC 4.7uF 4 AD08 3 AD03 2 T_SENSE 1 COIL_PEAK 5 41 RESERVED 48 ADCREF C1 C19 2.2nF C7 47p 26 25 24
BAT54SWT1 Preferred Device Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. http://onsemi.com 30 VOLT DUAL SERIES SCHOTTKY BARRIER DIODES * Extremely Fast Switching Speed * Low Forward Voltage - 0.35 Volts (Typ) @ IF = 10 mAdc 1 ANODE 2 CATHODE 3 CATHODE/ANODE MARKING DIAGRAM MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Symbol Value Unit Reverse Voltage VR 30 Volts Forward Power Dissipation @ TA = 25C Derate above 25C PF 200 1.6 mW mW/C Forward Current (DC) IF 200 Max mA Junction Temperature TJ 125 Max C Storage Temperature Range Tstg -55 to +150 C Rating 3 3 B8 1 2 (SC-70) SOT-323 CASE 419 STYLE 9 1 2 ORDERING INFORMATION Device Package Shipping BAT54SWT1 SOT-323 3000/Tape & Reel Preferred devices are recom
BAT54SWT1 Barrier Diodes 30 VOLTS DUAL SERIES SCHOTTKY AND BARRIER These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward DIODES voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. * Extremely Fast Switching Speed 3 * Low Forward Voltage -- 0.35 Volts (Typ) @ I F = 10 mAdc 1 2 SOT-323 (SC-70) ORDERING INFORMATION Device Package LBAT54SWT1 SOT-323 CATHODE ANODE 1 2 Shipping 3000/Tape & Reel 3 CATHODE/ANODE Preferred: devices are recommended choices for future use and best overall value. DEVICE MARKING LBAT54SWT1 = B8 MAXIMUM RATINGS (T J = 125C unless otherwise noted) Rating Symbol Reverse Voltage VR Forward Power Dissipation PF @ T A = 25C Derate above 25C Forward Current(DC) Junction Temperature Storage Temperature Range Value IF TJ T stg Unit 30 Volts 200 1.6 200Max 125Max -55 to +150 mW mW/
CC U5 TPS54231D 1 OUT 12V-IN J1 Q15 C79 R35 0 C70 C75 0.068uF C23 5.6nF 4700pF 0.1uF 3V3_VCC 0.1uF 3V3_VCC TP34 3V3_VCC R46 R28 200k 22 R25 R70 23.2k D5 10.0K 1.0uF 5 U11 BQ500410A I_SENSE 330pF R31 10.0K NTC C16 MSP_RST 4.7nF MSP_MISO MSP_TEST MSP_CLK D3 BAT54SW COMM+ COMM- N/C 1.0uF COMM+ 18 MSP_CLK 21 DOUT_TX 22 DOUT_RX BPCAP RESERVED RESERVED RESERVED RESERVED RESERVED DPWM_A PMOD MSP_SYNC COIL1.1 COIL1.2 COIL1.3 6 FOD 7 MSP_RST/LED1 8 MSP_MISO/LED2 9 MSP_TEST 37 COMM_A+ 38 COMM_A39 COMM_B+ 40 COMM_B- 3V3_VCC 35 31 30 29 28 27 3V3_VCC R66 10.0K C74 33pF COMM- R7 10.0K R72 R12 10.0K R11 10.0K RESERVED 20 RESERVED 19 11 PMB_DATA 10 PMB_CLK 46 V_IN 45 V_SENSE 42 I_SENSE TP18 12 13 14 15 16 17 DPWM-1A R8 10.0 MSP_SYNC COIL1.2 MSP_RDY 26 MSP_MOSI/LPWR_EN 25 BUZ_DC 24 BUZ_AC 23 47 GND 36 GND 32 GND 49 EPAD R10 NoPop C31 4.7nF C20 BAT54SW R2 TP15 V33D 33 RESET 4 AD08 3 AD03 2 T_SENSE 1 COIL_PEAK C4 1.0uF 10.0 COMM+ 10.0 41 RESERVED 48 ADCREF R5 10.0K R33 76.8K C3 4.7uF C22 0.1uF R40 100
BAT54SWT1 Preferred Device Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. http://onsemi.com 30 VOLT DUAL SERIES SCHOTTKY BARRIER DIODES Features * Extremely Fast Switching Speed * Low Forward Voltage - 0.35 Volts (Typ) @ IF = 10 mAdc * Pb-Free Package is Available 1 ANODE 2 CATHODE 3 CATHODE/ANODE MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Symbol Value Unit Reverse Voltage Rating VR 30 V Forward Power Dissipation @ TA = 25C Derate above 25C PF 200 1.6 mW mW/C Forward Current (DC) IF 200 Max mA Junction Temperature TJ -55 to 125 C Storage Temperature Range Tstg -55 to +150 C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (