AUIRF3205Z AUIRF3205ZS AUTOMOTIVE GRADE Features Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * HEXFET(R) Power MOSFET 55V VDSS RDS(on) max. 6.5m ID (Silicon Limited) 110A ID (Package Limited) 75A D Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Base part number Package Type AUIRF3205Z TO-220 G TO-220AB AUIRF3205Z D2Pak AUIRF3205ZS G D S Gate Drain Source Standard Pack Fo
AUIRF3205Z AUIRF3205ZS AUTOMOTIVE GRADE Features Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * HEXFET(R) Power MOSFET V(BR)DSS D G S 55V RDS(on) max. 6.5m ID (Silicon Limited) 110A ID (Package Limited) 75A Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D D G D S G Absolute Maximum Ratings S D2Pak AUIRF3205ZS TO-220AB AUIRF3205Z G Gate D D Drain S Source Stresses beyond those listed un
AUIRF3205 Features l l l l l l l l l HEXFET(R) Power MOSFET Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified* V(BR)DSS D G 55V RDS(on) max. 8.0m ID (Silicon Limited) 110A ID (Package Limited) S g 75A D Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET(R) Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. G D S TO-220AB AUIRF3205 G Gate D Drain S Source Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damag
AUIRF3205Z AUIRF3205ZS AUTOMOTIVE GRADE Features Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * HEXFET(R) Power MOSFET 55V VDSS RDS(on) max. 6.5m ID (Silicon Limited) 110A ID (Package Limited) 75A D Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Base part number Package Type AUIRF3205Z TO-220 G TO-220AB AUIRF3205Z D2Pak AUIRF3205ZS G D S Gate Drain Source Standard Pack Fo
AUIRF3205 Features l l l l l l l l l HEXFET(R) Power MOSFET Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified* V(BR)DSS D G 55V RDS(on) max. 8.0m ID (Silicon Limited) 110A ID (Package Limited) S g 75A D Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET(R) Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. G D S TO-220AB AUIRF3205 G Gate D Drain S Source Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damag
.00 190 Normal TO-262-3 AUIRF1405ZL Gen 10.2 4.90 150 0.65 2.00 ... 4.00 120 Normal TO-262-3 AUIRF1405ZS Gen 10.2 4.90 150 0.65 2.00 ... 4.00 120 Normal TO-263-3 (D2PAK) AUIRF1405ZS-7P Gen 10.2 4.90 120 0.65 2.00 ... 4.00 150 Normal TO-263-7 (D2PAK 7-leg) AUIRF3205Z Gen 10.2 6.50 75 0.90 2.00 ... 4.00 76 Normal TO-220-3 AUIRFR48Z Gen 10.2 11.00 42 1.64 2.00 ... 4.00 40 Normal TO-252-3 (DPAK) AUIRFR2905Z Gen 10.2 14.50 42 1.38 2.00 ... 4.00 29 Normal TO-252-3 (DPAK) AUIRFR4105Z Gen 10.2 24.50 30 3.12 2.00 ... 4.00 18 Normal TO-252-3 (DPAK) AUIRLL024Z Gen 10.2 60.00 5 n/a 2.00 ... 4.00 7 Normal SOT-223-3 AUIRFR2905Z Gen 10.2 14.50 42 1.38 2.00 ... 4.00 29 Normal TO-252-3 (DPAK) AUIRFR4105Z Gen 10.2 24.50 30 3.12 2.00 ... 4.00 18 Normal TO-252-3 (DPAK) Technology RDS(on) @ 10 V [m] ID [A] RthJC (max) [K/W] VGS(th) (min-max) [V] QG (typ) [nC] Normal/ logic level LED drivers ID [A] Motor drivers RDS(on) @ 10 V [m] OPTIREGTM Automotive Power Supply ICs Technology Network ICs Product name 60 V (Trench)
.. 4.00 190 Normal TO-262 AUIRF1405ZL Gen 10.2 4.90 150 0.65 2.00 ... 4.00 120 Normal TO-262 AUIRF1405ZS Gen 10.2 4.90 150 0.65 2.00 ... 4.00 120 Normal TO-263-3 (D2PAK) AUIRF1405ZS-7P Gen 10.2 4.90 120 0.65 2.00 ... 4.00 150 Normal TO-263-7 (D2PAK 7-leg) AUIRF3205Z Gen 10.2 6.50 75 0.90 2.00 ... 4.00 76 Normal TO-220 AUIRFR48Z Gen 10.2 11.00 42 1.64 2.00 ... 4.00 40 Normal TO-252 (DPAK) AUIRFR2905Z Gen 10.2 14.50 42 1.38 2.00 ... 4.00 29 Normal TO-252 (DPAK) AUIRFR4105Z Gen 10.2 24.50 30 3.12 2.00 ... 4.00 18 Normal TO-252 (DPAK) AUIRLL024Z Gen 10.2 60.00 5 n/a 2.00 ... 4.00 7 Normal SOT-223 Technology RDS(on) @ 10 V [m] ID [A] RthJC (max) [K/W] VGS(th) (min-max) [V] QG (typ) [nC] Normal/ logic level Low-side switches RDS(on) @ 10 V [m] Smart multichannel switches Technology High-side switches Product name Gen 10.7 1.50 345 0.50 2.00 ... 4.00 183.00 Normal DirectFETTM2 L8 OptiMOSTM-T2 1.70 180 0.60 2.00 ... 4.00 208.00 Normal TO263-7-3 Gen 10.7 1.90 240 0.40 1.00 ... 2.50 110.00 Logic IPB120N06S