contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https://assist.dla.mil . AMSC N/A FSC 5961 MIL-PRF-19500/512L 1.3 Maximum ratings - continued. Types 2N4033 2N4029 2N4033UA 2N4033UB (1) (2) (3) (4) PT PT PT TA = +25C (1) (2) TC = +25C (1) (2) TSP(IS) = +25C (1) (2) W W 4 1 N/A N/A 0.800 0.500 0.500 (4) 0.500 RJA (2) (3) RJC (2) (3) RJSP(IS) (2) (3) RJSP(AM) (2) (3) W C/W C/W C/W C/W N/A N/A 1.5 1.5 195 325 325 325 40 150 N/A N/A N/A N/A 110 90 N/A N/A 40 N/A For derating, see figures 7, 8, 9, 10, and 11. See 3.3. For thermal impedance curves, see figures 12, 13, 14, 15, 16, 17, and 18. For non-thermal conductive PCB or unknown PCB surface mount conditions in free air, substitute figures 8 and 16 for the UB package and use RJA. 1.4 Primary electrical characteristics. Unless otherwise specified TA = +25C. hFE1 hFE2 hFE3 hFE4 Limits VCE = 5.0 V dc IC = 100 A dc VCE = 5.0 V dc IC = 100 mA dc VCE = 5.0 V dc IC = 500 mA
2N4033UB Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: * High-speed switching * Low Power * PNP silicon transistor * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N4033UBJ) * JANTX level (2N4033UBJX) and * JANTXV level (2N4033UBJV) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV * Radiation testing (total dose) upon request Features * * * * Hermetically sealed Cersot ceramic Also available in chip configuration Chip geometry 6700 Reference document: MIL-PRF-19500/512 Benefits * Qualification Levels: JAN, JANTX, and JANTXV * Radiation testing available Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter TC = 25C unless otherwise specified Symbol Rating Collector-Emitter Voltage VCEO 80 Collector-Base Voltage VCBO 80 Unit Volts Volts Emitter-Base Voltage VEBO 5 Volts Collector Cur
this revision shall be completed by 23 October 2001. INCH-POUND MIL-PRF-19500/512E 23 July 2001 SUPERSEDING MIL-PRF-19500/512D 14 July 2000 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING TYPES 2N4029, 2N4033, 2N4033UA, 2N4033UB, JAN, JANTX, JANTXV, JANS AND JANKC2N4033 AND JANHC2N4033 This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP silicon transistors designed for use in high speed switching and driver applications. Four levels of product assurance are provided for each encapsulated device type and two levels of product assurance for each unencapsulated specified as in MIL-PRF-19500. 1.2 Physical dimensions. See figures 1 (TO-18), figure 2 (TO-39), figure 3 and figure 4 (surface mount) ) and figure 5 (JANKC and JANHC) herein. 1.3 Maximum ratings. PT (1) PT (2) PT (3) PT (1) TA = +25C TA = +25C TA = +25C TA = +25C VCBO VCEO VEB
ent shall be completed by 23 July 2010. INCH-POUND MIL-PRF-19500/512J 23-APRIL-2010 SUPERSEDING MIL-PRF-19500/512H 15 October 2007 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING, TYPES 2N4029, 2N4033, 2N4033UA, 2N4033UB, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANKC2N4033, AND JANHC2N4033 This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for PNP silicon transistors designed for use in high speed switching and driver applications. Four levels of product assurance are provided for each encapsulated device type and two levels of product assurance for each unencapsulated specified as in MIL-PRF-19500. Provisions for radiation hardness assurance (RHA) to eight radiation l
: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/512 DEVICES LEVELS 2N4029 2N4033 2N4033UA 2N4033UB JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 80 Vdc Emitter-Base Voltage VEBO 5.0 Vdc IC 1.0 Adc PT 0.5 0.8 0.5 W Tj, Tstg -65 to +200 C RJC 80 40 C/W Collector Current Total Power Dissipation @ TA = +25C 2N4029 1 2N4033 2 2N4033UA, UB3 Operating & Storage Junction Temperature Range Thermal Resistance, Junction-to-Case Note: 1. 2. 3. 2N4029 2N4033 Derate linearly 2.86mW/C for TA > +25C Derate linearly 4.56mW/C for TA > +25C For UB package and use RJC or see thermal curves in /512 TO-18 (TO-206AA) 2N4029 TO-39 (TO-205AD) 2N4033 ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted)
/366/512 JANS2N3499L NPN PNP SS SS 100V 80V 100-300,100-300, 150mA 100mA 0.5A TO-51.0A JANS2N4033 /366 NPN SS 150V JANS2N3500 40-120, 150mA 0.5A TO-39 JANS2N4033UA /366/512 PNP SS 80V 100-300, 100mA 1.0A JANS2N3500L NPN SS 150V 40-120, 150mA 0.5A TO-5 JANS2N4033UB 1.0A /366/512 JANS2N3501 NPN PNP SS SS 150V 80V 100-300,100-300, 150mA 100mA 0.5A TO-39 JANS QUALIFIED BI-POLAR TRANSISTORS* /366 NPN SS 150V 100-300, 150mA JANS2N3501L 0.5A TO-5 /366 NPN SS 150V 100-300, 150mA JANS2N3501UB 0.5A UB(LCC3) /391Slash JANS2N3700 NPN SS 80V 100-300, 150mA 1.0A TO-18 Part # hFE @1.0A Ic Rated Ic /391 NPN SSType80V Voltage JANS2N3700UB 100-300, 150mA UB(LCC3) Sheet /317 NPN SS JANS2N4449 15V 30-120, 30mA 0.1A TO-18 /355 NPN DUAL 60V 150-600, 1mA JANS2N2919 /355 NPN DUAL 60V 150-600, 1mA JANS2N2919L /355 NPN DUAL 60V 150-600, 1mA JANS2N2919U /355 NPN DUAL 60V 300-1000, 1mA JANS2N2920 /355 NPN DUAL 60V 300-1000, 1mA JANS2N2920L NPN DUAL 60V 1mA * JANS2N2920U Transistors qualified to various /355 total dose radia