2N2369AU 2N2369AUA 2N2369AUB 2N2369AUBC * 2N4449 JAN JANTX JANTXV JANS * Available to JANS quality level only. ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage 2N2369A / U / UA 2N4449 / UB / UBC VCEO 15 20 Vdc Emitter-Base Voltage 2N2369A / U / UA 2N4449 / UB / UBC VEBO 4.5 6.0 Vdc Collector-Base Voltage VCBO 40 Vdc Collector-Emitter Voltage ICES 40 Vdc PT 0.36 (1) 0.36 (1, 5) 0.50 (4) W Top, Tstg -65 to +200 C Symbol Value Unit RJA 400 400 (5) 350 C/W Total Power Dissipation @ TA = +25C 2N2369A; 2N4449 UA, UB, UBC U TO-18 (TO-206AA) 2N2369A TO-46 (TO-206AB) Operating & Storage Junction Temperature Range 2N4449 THERMAL CHARACTERISTICS Parameters / Test Conditions Thermal Resistance, Ambient-to-Case 2N2369A; 2N4449 UA, UB, UBC U Note: 1. 2. 3. 4. 5. Derate linearly 2.06 mW/C above TA = +25C. Derate linearly 4.76 mW/C above TC = +95C. Derate linearly 3.08 mW/C above TC = +70C.
nd TSTG W W W V dc V dc V dc V dc C 2N2369A, UA, UB, UBC, UBCN 2N4449, UA, UB, UBC, UBCN 2N3227, UA, UB, UBC, UBCN 0.36 (2) 0.36 (2) 0.36 (2) 0.36 (3)(4) 0.36 (3)(4) 0.36 (3)(4) 0.36 (3) 0.36 (3) 0.36 (3) 40 40 40 4.5 4.5 6.0 15 15 20 40 40 40 -65 to +200 2N2369AU 2N4449U 2N3227U 0.5 (5) 0.5 (5) 0.5 (5) 40 40 40 4.5 4.5 6.0 15 15 20 40 40 40 Types RJA RJC RJSP C/W C/W C/W 2N2369A 2N4449 2N3227 400 400 400 150 150 150 2N2369AUA, UB, UBC, UBCN 2N4449UA, UB, UBC, UBCN 2N3227UA, UB, UBC, UBCN 486 486 486 210 210 210 350 (6) 350 (6) 350 (6) 290 (7) 290 (7) 290 (7) 2N2369AU 2N4449U 2N3227U * (1) (2) (3) (4) (5) Applicable for UA, UB, UBC, UBCN and U packages. For TO-18 and TO-46 packages derate linearly 2.06 mW/C above TA = +25C. Derate linearly 4.8 mW/C above TC =+125C. See figures 8, 9, 10, 11, and 12. Power dissipation limited to 360 mW per chip regardless of thermal resistance. For UA, UB, UBC, and UBCN packages mounted on FR-4 PCB (1 Oz. Cu) with contacts 20 mils larger t
2N2369AUB Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corpoation offers: * High-speed switching transistor * Low power * NPN silicon transistor * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N2369AUBJ) * JANTX level (2N2369AUBJX) * JANTXV level (2N2369AUBJV) * JANS level (2N2369AUBJS) * JANSR level (2N2369AUBJSR) * JANSR level (2N2369AUBJSR) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method Features 2072 for JANTXV and JANS * * * * * Radiation testing (total dose) upon request Hermetically sealed Cersot ceramic Also available in chip configuration Chip geometry 0005 Reference document: MIL-PRF-19500/317 Benefits * Qualification Levels: JAN, JANTX, JANTXV, JAN, JANSR and JANSF * Radiation testing available Please contact SEMICOA for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Vol
c Package JANS2N930 JANS2N930UB JANS2N2218 JANS2N2218A JANS2N2218AL JANS2N2219 JANS2N2219A JANS2N2219AL JANS2N2221A JANS2N2221AL JANS2N2221AUA JANS2N2221AUB JANS2N2221AUBC JANS2N2222A JANS2N2222AL JANS2N2222AUA JANS2N2222AUB JANS2N2222AUBC JANS2N2369A JANS2N2369AU JANS2N2369AUA JANS2N2369AUB JANS2N2369AUBC JANS2N2484 JANS2N2484UA JANS2N2484UB JANS2N2484UBC JANS2N3019 JANS2N3019S JANS2N3057A JANS2N3439 JANS2N3439L JANS2N3439UA JANS2N3440 JANS2N3440L JANS2N3440UA JANS2N3498 JANS2N3498L JANS2N3499 JANS2N3499L JANS2N3500 JANS2N3500L JANS2N3501 JANS2N3501L JANS2N3501UB JANS2N3700 JANS2N3700UB JANS2N4449 /253 /253 /251 /251 /251 /251 /251 /251 /255 /255 /255 /255 /255 /255 /255 /255 /255 /255 /317 /317 /317 /317 /317 /376 /376 /376 /376 /391 /391 /391 /368 /368 /368 /368 /368 /368 /366 /366 /366 /366 /366 /366 /366 /366 /366 /391 /391 /317 NPN SS NPN SS NPN SS NPN SS NPN SS NPN SS NPN SS NPN SS NPN SS NPN SS NPN SS NPN SS NPN SS NPN SS NPN SS NPN SS NPN SS NPN SS
his document shall be completed by 19 September 2008. MIL-PRF-19500/317M 19 June 2008 SUPERSEDING MIL-PRF-19500/317L 18 November 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, TYPES 2N2369A, 2N3227, 2N4449, 2N2369AU, 2N3227U, 2N2369AUA, 2N3227UA, 2N2369AUB, 2N2369AUBC, 2N3227UB, AND 2N3227UBC, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH JANHCA, JANHCB, JANKCA, JANKCB, JANKCM, JANKCD, JANKCP, JANKCL, JANKCR, JANKCF, JANKCG, AND JANKCH This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for NPN, silicon, high speed switching transistors (including dual devices). Four levels of product assurance are provided for each device type as sp
158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/317 DEVICES LEVELS 2N2369A 2N2369AU 2N2369AUA 2N2369AUB 2N2369AUBC * 2N4449 JAN JANTX JANTXV JANS * Available to JANS quality level only. ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 15 Vdc Emitter-Base Voltage VEBO 4.5 Vdc Collector-Base Voltage VCBO 40 Vdc Collector-Emitter Voltage ICES 40 Total Power Dissipation @ TA = +25C 2N2369A; 2N4449 UA, UB, UBC U Operating & Storage Junction Temperature Range TO-18 (TO-206AA) 2N2369A Vdc (1) PT 0.36 0.36 (1, 3) 0.50 (2) W Top, Tstg -65 to +200 C Symbol Value Unit TO-46 (TO-206AB) 2N4449 THERMAL CHARACTERISTICS Parameters / Test Conditions Thermal Resistance, Ambient-to-Case 2N2369A; 2N4449 400 C/W R
2N2369AUB) Features: Applications: * * * * * * * Hermetically sealed Hermetically sealed 3 pin LCC MIL-PRF-19500 screening available OPTOELECTRONIC PRODUCTS DIVISION Analog Switches Signal Conditioning Small Signal Amplifiers High Density Packaging DESCRIPTION The 61113 is a N-P-N, general-purpose switching and amplifier transistor in a 3 pin leadless chip carrier package. All packages are hermetically sealed for high reliability and harsh environments. This device is available custom binned to customer specifications in commercial or screened to MIL-PRF-19500 up to JANS level. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage - VCBO ................................................................................................................................................. 40Vdc Collector-Emitter Voltage - VCEO .............................................................................................................................................. 15Vdc Collector-Emitter Voltage - VCES ....
2N2369AUB Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: * High-speed switching transistor * Low power * NPN silicon transistor * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N2369AUBJ) * JANTX level (2N2369AUBJX) * JANTXV level (2N2369AUBJV) * JANS level (2N2369AUBJS) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS * Radiation testing (total dose) upon request Features * * * * Hermetically sealed Cersot ceramic Also available in chip configuration Chip geometry 0005 Reference document: MIL-PRF-19500/317 Benefits * Qualification Levels: JAN, JANTX, JANTXV and JANS * Radiation testing available Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage TC = 25C unless otherwise specified Symbol VCEO Rating 15 Collector-Base Voltage VCBO 40
2N2369AU 2N2369AUA 2N2369AUB 2N2369AUBC * 2N4449 JAN JANTX JANTXV JANS * Available to JANS quality level only. ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage 2N2369A / U / UA 2N4449 / UB / UBC VCEO 15 20 Vdc Emitter-Base Voltage 2N2369A / U / UA 2N4449 / UB / UBC VEBO 4.5 6.0 Vdc Collector-Base Voltage VCBO 40 Vdc Collector-Emitter Voltage ICES 40 Vdc PT 0.36 (1) 0.36 (1, 5) 0.50 (4) W Top, Tstg -65 to +200 C Symbol Value Unit RJA 400 400 (5) 350 C/W Total Power Dissipation @ TA = +25C 2N2369A; 2N4449 UA, UB, UBC U TO-18 (TO-206AA) 2N2369A TO-46 (TO-206AB) Operating & Storage Junction Temperature Range 2N4449 THERMAL CHARACTERISTICS Parameters / Test Conditions Thermal Resistance, Ambient-to-Case 2N2369A; 2N4449 UA, UB, UBC U Note: 1. 2. 3. 4. 5. Derate linearly 2.06 mW/C above TA = +25C. Derate linearly 4.76 mW/C above TC = +95C. Derate linearly 3.08 mW/C above TC = +70C.
2N2369AU 2N2369AUA 2N2369AUB Qualified Level 2N4449 2N4449U 2N4449UA 2N4449UB JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Symbol VCEO VEBO VCBO VCES All UB 20 6.0 All others 15 4.5 Unit Vdc Vdc Vdc Vdc 40 40 @ TA = +250C @ TC = +250C Total Power Dissipation 2N2369A; 2N4449 0.50(1) 1.2(2) (5) All UA 0.50 1.2(2) PT (6) All UB 0.40 1.4(7) (3) All U 0.60 1.5(4) Operating & Storage Junction Temperature Range Top, Tstg -65 to +200 W W 0 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 2N2369A; 2N4449 All UA All UB All U Thermal Resistance, Ambient-to-Case 2N2369A; 2N4449 All UA All UB All U 1) Derate linearly 3.08 mW/0C above TA = +37.50C 2) Derate linearly 6.85 mW/0C above TC = +250C 3) Derate linearly 3.44 mW/0C above TA = +63.50C 4) Derate linearly 8.55 mW/0C above TC = +63.50C Symbol Max. RJC 146 125 135 117 RJA 325 350 437 291 TO-18* (TO-206AA) 2N2369
20 3 PACKAGE PEAK Vee (sat) ICC-3 DEVICE BYceo Ic hee loo Yee MAX kelp TYPE VOLTS (mA) MIN/MAX = (mA) (V) (Vv) (nA) (nA) 24 2N2222AUB** 50 800 100/300 150/10 03 150/15 2n23e9auB S200 40/120 3/0.4 0.2 10/1 i 2N2222AUA* 30 800 100/300 150/10 02 150/15 LCC-4 2N2369AUA 15 200 40/120 3/0.4 02 10/l 3 2 3 PACKAGE PEAK Vee (sat) ICC-3 DEVICE BYcEo Ic hee lc@ Vee MAX le @ tp TYPE VOLTS (mA) MIN/MAX = (mA) (V) (v) (nA) (nA) > 1 2N2506AUB** 60 600 40/120 150/10 04 150/15 2N2907AUB* 60 600 100/300 150/10 04 150/15 LCC-A ss 2N2906AUA" 60 600 40/120 150/10 04 150/15 2N2907AUA* 60 600 100/300 150/10 04 150/15 3 2 Electrical Characteristics at 25C unless otherwise nated. * Available in JANTX ond TXV
FT2369A2 __ __ Screening 2/ __ = Commercial TX = TX Level TXV = TXV Level S = S Level Package GW = Gullwing Features: * * * * * High Speed Switching Transistor Suitable in chopper, uhf and rf application Multiple Devices Reduce Board Space Replacement for 2N2369AU TX, TXV, S-Level screening available Maximum Ratings Symbol Value Units Collector - Emitter Voltage VCEO 15 Volts Collector - Base Voltage VCBO 40 Volts Emitter - Base Voltage VEBO 4.5 Volts IC 100 mAmps PD 360 500 mW Top & Tstg -65 to +200 C RJ-PCB 290 C/W Continues Collector Current Power Dissipation @ Ta = 25C Operating & Storage Temperature Maximum Thermal Resistance (Junction to PCB) Per Device Total Gullwing (GW) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0045A SFT2369A2 Series Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-
1/ SFT2369A2 __ __ Screening 2/ __= Commercial TX= TX Level TXV= TXV Level S= S Level Package GW= Gullwing Features: * * * * * High Speed Switching Transistor Suitable in chopper, UHF and RF application Multiple Devices Reduce Board Space Replacement for 2N2369AU TX, TXV, S-Level Screening Available 2/ Maximum Ratings Symbol Value Units Collector - Emitter Voltage VCEO 15 Volts Collector - Base Voltage VCBO 40 Volts Emitter - Base Voltage VEBO 4.5 Volts IC 100 mA PD 360 500 mW TOP & Tstg -65 to +200 C RJ-PCB 350 C/W Continuous Collector Current Per Device Total Power Dissipation @ TA= 25C Operating & Storage Temperature Maximum Thermal Resistance (Junction to PCB) Gullwing (GW) 2x .050 (=.100) .015 3x .015 .015.010 PIN 6 PIN 4 PIN 4 6x .010 PIN 6 6x .030 SSDI 5x R.018 .125 .034 .025 PIN 3 PIN 3 PIN 1 .350 .010 .193 PIN 1 .107 .040 .010 Tolerances: .xx .01 .xxx .005 .107 .010 .130 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SS
2N2369AUB JAN, JTX, JTXV 2N4449, U, UA, JAN, JTX, JTXV QML DEVICES Processed per MIL-PRF-19500/317 NPN SWITCHING SILICON TRANSISTORS 2N2369A 2N4449 TO-18 (TO-206AA) TO-46 (TO-206AB) MAXIMUM RATINGS Ratings Collector-Emitter Voltage Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Total Power Dissipation @ TA = +250C @ TC = +250C Operating & Storage Junction Temperature Range Symbol VCEO VEBO VCBO VCES PT 2N2369A 2N4449 15 4.5 40 40 0.50(1) 1.2(2) 15 4.5 40 40 0.50(1) 1.2(2) All UA 15 4.5 40 40 0.50(5) 1.4(7) All UB 20 6.0 40 40 0.40(6) 1.3(8) All U 15 4.5 40 40 0.60( 3 Unit Vdc Vdc Vdc Vdc W W 1.5(4) 0 C -65 to +200 Top, Tstg THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol 2N2369A 2N4449 RJC 146 146 All UA 125 All UB 135 All U 117 RJA 325 325 350 437 291 1) Derate linearly 3.08 mW/0C above TA = +37.50C 2) Derate linearly 6.85 mW/0C above TC = +250C 3) Derate linearly 3.44 mW/0C above TA = +63.50C 4) D