MIL-PRF-19500/317T 30 August 2015 SUPERSEDING MIL-PRF-19500/317R 27 January 2014 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, NPN, SILICON, SWITCHING, ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT), AND UNENCAPSULATED, RADIATION HARDNESS ASSURANCE, TYPES 2N2369A, 2N3227, 2N4449, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for NPN, silicon, high speed switching transistors (including dual devices). Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500, and two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to two radiation levels ("R" and "F"
A 40 120 0.35/0.01 400MHz NPN 30V 0.04A - - - PNP 12V 0.2A 40 - 0.5/0.03 800MHz PNP 60V 0.6A 40 120 10/0.15 200MHz Quad Ceramic Flat Pack Quad Ceramic Flat Pack Quad Ceramic Flat Pack Quad Ceramic Flat Pack Quad Ceramic Flat Pack 2N2368AQF Quad Transistor 2N2369AQF Quad Transistor 2N2857QF Quad Transistor 2N2894AQF Quad Transistor 2N2906AQF Quad Transistor 2N2907AQCSM Quad Transistor LCC6 PNP 60V 0.6A 100 300 10/0.15 200MHz 2N2907AQF Quad Transistor Quad Ceramic Flat PNP Pack 60V 0.6A 100 300 10/0.15 200MHz LCC20 PNP 60V 0.6A 100 300 10/0.15 200MHz LCC6 PNP 60V 0.6A 100 300 10/0.15 200MHz 2N2907AQLCC20 2N2907EX8CSM Quad Transistor 8 Transistor Array 1.9GHz 2N3209AQF Quad Transistor 2N3251AQF Quad Transistor 2N7334 2N7335 Quad MOSFET Quad MOSFET 2N7336 Array 2N918AQF Quad Transistor BC107QF Quad Transistor BC108QF Quad Transistor BC109QF Quad Transistor BC477QF Quad Transistor BC478QF Quad Transistor BC479QF Quad Transistor BCY58QF Quad Transistor BCY59QF Quad Transistor BCY70QF Quad Transistor BC
2N2369A 2N2369AU 2N2369AUA 2N2369AUB 2N2369AUBC * 2N4449 JAN JANTX JANTXV JANS * Available to JANS quality level only. ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage 2N2369A / U / UA 2N4449 / UB / UBC VCEO 15 20 Vdc Emitter-Base Voltage 2N2369A / U / UA 2N4449 / UB / UBC VEBO 4.5 6.0 Vdc Collector-Base Voltage VCBO 40 Vdc Collector-Emitter Voltage ICES 40 Vdc PT 0.36 (1) 0.36 (1, 5) 0.50 (4) W Top, Tstg -65 to +200 C Symbol Value Unit RJA 400 400 (5) 350 C/W Total Power Dissipation @ TA = +25C 2N2369A; 2N4449 UA, UB, UBC U TO-18 (TO-206AA) 2N2369A TO-46 (TO-206AB) Operating & Storage Junction Temperature Range 2N4449 THERMAL CHARACTERISTICS Parameters / Test Conditions Thermal Resistance, Ambient-to-Case 2N2369A; 2N4449 UA, UB, UBC U Note: 1. 2. 3. 4. 5. Derate linearly 2.06 mW/C above TA = +25C.
ecessary to comply with this document shall be completed by 19 September 2008. MIL-PRF-19500/317M 19 June 2008 SUPERSEDING MIL-PRF-19500/317L 18 November 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, TYPES 2N2369A, 2N3227, 2N4449, 2N2369AU, 2N3227U, 2N2369AUA, 2N3227UA, 2N2369AUB, 2N2369AUBC, 2N3227UB, AND 2N3227UBC, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH JANHCA, JANHCB, JANKCA, JANKCB, JANKCM, JANKCD, JANKCP, JANKCL, JANKCR, JANKCF, JANKCG, AND JANKCH This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for NPN, silicon, high speed switching transistors (including dual devices). Four levels of product assurance a
2N2369A* NPN Silicon *Motorola Preferred Device 2 BASE 1 EMITTER 3 Rating Symbol Value Unit Collector - Emitter Voltage VCEO 15 Vdc Collector - Emitter Voltage VCES 40 Vdc Collector- Base Voltage VCBO 40 Vdc Emitter- Base Voltage VEBO 4.5 Vdc Collector Current (10 ms pulse) IC(Peak) 500 mA Collector Current -- Continuous IC 200 mA Total Device Dissipation @ TA = 25C Derate above 25C PD 0.36 2.06 Watt mW/C Total Device Dissipation @ TC = 100C Derate above 100C PD 0.68 6.85 Watts mW/C TJ, Tstg - 65 to +200 C Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 486 C/W Thermal Resistance, Junction to Case RqJC 147 C/W Operating and Storage Junction Temperature Range 2 1 CASE 22-03, STYLE 1 TO-18 (TO-206AA) LAST ORDER 23/09/99 LIFETIME BUY MAXIMUM RATINGS THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Max Unit Collector - Emitter Breakdown Voltage (IC = 10 mA, VBE = 0) V(BR)CES 40 -- Vdc Collector - Emitter Sustaining Voltage(1)
ORCLA SC XSTRS/R F 1cE D a b3672S4 O04be4%a oO i MAXIMUM RATINGS Rating Symbol Value Unit 2N2368 . T-85-J5 Collector-Emitter Voltage VcEO Vde 2N2368,9,A 15 2N2369, A 2N3227 20 Collector-Emitter Voltage Vces 40 Vdo 2N3227 Collector-Base Voltage VcBo 40 Vde 2N2369A JAN, JTX Emitter-Base Voltage VEBO Vde JTXV AVAILABLE 2368.9, 5 aNee to CASE 22-03, STYLE 1 Coltector Current Ic(Peak) 600 mA TO-18 (TO-206AA) (10 us pulse) Collector Current Continuous Ic 200 mA 3 Collector 2N2369A, 2N3227 2 Total Device Dissipation Pp Base @Ta = 25C 0.36 Watt Derate above 25C 2.06 mWwPrc 3 + Emitter Total Device Dissipation Pp au @ To = 26C 1.2 Watts Derate above 26C 2N3227 6.85 mWFC SWITCHING TRANSISTORS Total Device Dissipation Pp @ Tc = 100C 88 Watts NPN SILICON Derate above 100C 6.85 mWwrc Operating and Storage Junction Ty. Tstg | 65to +200 c Temperature Range ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) | Characteristic | Symbol | Min Max Unit OFF CHARACTERISTICS Collector-Emitter Bre
40 -- Vdc Emitter - Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 4.5 -- Vdc -- -- 0.4 30 ICES -- 0.4 mAdc IB -- 0.4 mAdc Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 150C) 2N2369 2N2369A Collector Cutoff Current (VCE = 20 Vdc, VBE = 0) 2N2369A Base Current (VCE = 20 Vdc, VBE = 0) 2N2369A 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. mAdc ICBO Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small-Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit 2N2369 2N2369A 40 -- 120 120 (IC = 10 mAdc, VCE = 1.0 Vdc, TA = -55C) 2N2369 20 -- (IC = 10 mAdc, VCE = 0.35 Vdc, TA = -55C) (IC = 30 mAdc, VCE = 0.4 Vdc) 2N2369A 2N2369A 20 30 -- -- (IC = 100 mAdc, VCE = 1.0 Vdc) 2N2369A
2N2369AJAN, JTX, JTXV, JANS 2N3227JAN, JTX, JTXV 2N4449JAN, JTX, JTXV Processed per MIL-S-19500/317 NPN Silicon Small-Signal Transistors designed for general-purpose switching applications. MAXIMUM RATINGS Rating Symbol | 2N2369A | 2N3227 | 2Na449 | Unit Collactor-Emitter Voltage VCEO 15 20 16 Vde 2N2369A, 2N3227 CASE 22-03, STYLE 1 Hector [ Vi 4 Vi Collector-Emitter Voltage CES 40 0 40 de To: A(TO-18) Collector-Base Voltage VcBO 40 40 40 Vde Emitter-Base Voltage VEBO 45 6.0 45 Vdc Total Device Dissipation Pr @Ta=25C 360 i < mw Derate above 25C on 06 : mw : 1.2 15 Watts @Tc = 25C 6.85 6.85 a Derate above 25C. 2N444! t CASE 26-03 Operating Junction and Storage Ty, Tstg -65 to 200 c TO-206AB (TO-46) Temperature Range ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) Characteristic | Symboi | Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage! ') ViBRICEO | Vide (Ii = 10 mAde, Ip = 0} 2N2369A, 2N4449 15 2N3227 20 = Collector-Emitte
JANTXV2N2222A 2N2222A JANTXV2N2222A 182 30 X X 255 182 30 JANTXV2N720A JANTXV2N720A 20 20 JANS2N2222A 301 16 X X 255 301 16 JAN2N918 JANS2N2222A JAN2N918255 255 255 20 X 20 JANSR2N2222A JANSR2N2222A 301 16 X 301 16 JANTX2N918 JANTX2N918 317 16 X 317 16 JAN2N2369A JAN2N2369A 301 16 X 301 16 JANTXV2N918 JANTXV2N918 2N918 317 16 X 317 16 JANTX2N2369A 301 16 X 301 16 JANS2N918 JANTX2N2369A JANS2N918 317 16 X 317 16 JANTXV2N2369A JANTXV2N2369A 301 16 X 301 16 JANSR2N918 2N2369A JANSR2N918 317 16 X 317 16 JANS2N2369A JANS2N2369A 301 16 X 301 16 JANSF2N918 JANSF2N918 317 16 X 317 16 JANSR2N2369A JANSR2N2369A 253 18 X 253 18 JAN2N930 JAN2N930317 16 X 317 16 JANSF2N2369A JANSF2N2369A 253 18 X 253 18 JANTX2N930 JANTX2N930 2N930 376 18 X 376 18 JAN2N2484 JAN2N2484 253 18 X 253 18 JANTXV2N930JANTX2N2484 JANTXV2N930 376 18 X 376 18 JANTX2N2484 2N2484 182 3
l Resistance, Junction to Case Rac 147 C ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) Characteristic OFF CHARACTERISTICS 2N2369,A* CASE 22-03, STYLE 1 TO-18 (TO-206AA) 3 Collector 2 Base 3 24, 1 Emitter SWITCHING TRANSISTORS NPN SILICON %*2N2369A is a Motorola designated preferred device. Symbol [ Min l Max | Unit Collector-Emitter Breakdown Voltage (Ic = 10 pA, Vege = 0) V(BR)CES 40 - Vde Collector-Emitter Sustaining Voltage(1) {Ic = 10 mAdc, Ig = 0) VCEO(sus) 3) _ Vde Collector-Base Breakdown Voltage (l = 10 uA, Ig = 0) V(BR}CBO 40 - Vde Emitter-Base Breakdown Voltage (Ig = 10 nAde, Ic = 0) V(BRIEBO 45 = Vde Collector Cutoff Current (Vcpg = 20 Vde, Ie = 0} (Vcp = 20 Vde, Ie = 0, Ta = 150C) 2N2369 2N2369A IcBo pAdc Collector Cutoff Current (VcE = 20 Vde, Vag = 0) 2N2369A IcES > 0.4 pAdc Base Current (VcE = 20 Vdc, VBE = 0} 2N2369A ig 0.4 pAde ON CHARACTERISTICS DC Current Gain(1} (I = 10 mAdc, VcgE = 1.0 Vdc) (ic = 10 mAdc, VcE = 1.0 Vde, T
2N2369A* COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER 3 2% MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage VCEO 15 Vde CASE 22-03, STYLE 1 TO18 (TO-206AA) CollectorEmitter Voltage VCES 40 Vde CollectorBase Voltage VCBO 40 Vde EmitterBase Voltage VEBO 4.5 Vde Collector Current (10 us pulse) IC(Peak) 500 mA Collector Current Continuous Io 200 mA Total Device Dissipation @ Ta = 25C Pp 0.36 Watt Derate above 25C 2.06 mW/C Total Device Dissipation @ Tc = 100C PD 0.68 Watts Derate above 100C 6.85 mW/C Operating and Storage Junction TY: Tstg 65 to +200 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RaJA 486 C/W Thermal Resistance, Junction to Case ReJc 147 C/W ELECTRICAL CHARACTERISTICS (Tyg = 25C unless otherwise noted) Characteristic Symbol | Min | Max | Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Ic = 10 pA, VBE = 0) V(BR)CES 40 _ Vde CollectorEmitter Sustaining Voltage(1) (I = 10 mAde, I
tion to Ambient Raa 486 CAW Thermal Resistance, Junction to Case Resc 147 CW ELECTRICAL CHARACTERISTICS (T, = 25C unless otherwise noted.) 2N2369,A* CASE 22-03, STYLE 1 TO-18 (TO-206AA) 3 Collector 2 Base 3 oF, 1 Emitter SWITCHING TRANSISTORS NPN SILICON *2N2369A is a Motorola designated preferred device. Characteristic OFF CHARACTERISTICS Symbol Min | Max Unit Coltector-Emitter Breakdown Voltage (l = 10 uA, Vge = 0} ViBR)CES 40 _ Vdc Collector-Emitter Sustaining Voltage(1) (I = 10 mAdc, Ip = 0) VCEOisus) 15 _ Vde Collector-Base Breakdown Voltage (Ic = 10 2A, Ip = 0) V(BRICBO Vdc Emitter-Base Breakdown Voltage (le = 10 wAde, Ie = 0) V(BR)EBO 45 Vde Collector Cutoff Current (Vcp = 20 Vdc, Ip = 0) (Veg = 20 Vde, le = 0, Ta = 150C) 2N2369 2N2369A IcBo wAdc Collector Cutoff Current (VceE = 20 Vdc, Vge = 0) 2N2369A IcEs - 0.4 wAdc Base Current (VcE = 20 Vdc, Vee = 0) 2N2369A IB _ 0.4 pAdc ON CHARACTERISTICS DC Current Gain(1} (le = 10 mAde, Veg = 1.0 Vde) {lc = 1
2N2369A 2N2369AU 2N2369AUA 2N2369AUB 2N2369AUBC * 2N4449 JAN JANTX JANTXV JANS * Available to JANS quality level only. ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage 2N2369A / U / UA 2N4449 / UB / UBC VCEO 15 20 Vdc Emitter-Base Voltage 2N2369A / U / UA 2N4449 / UB / UBC VEBO 4.5 6.0 Vdc Collector-Base Voltage VCBO 40 Vdc Collector-Emitter Voltage ICES 40 Vdc PT 0.36 (1) 0.36 (1, 5) 0.50 (4) W Top, Tstg -65 to +200 C Symbol Value Unit RJA 400 400 (5) 350 C/W Total Power Dissipation @ TA = +25C 2N2369A; 2N4449 UA, UB, UBC U TO-18 (TO-206AA) 2N2369A TO-46 (TO-206AB) Operating & Storage Junction Temperature Range 2N4449 THERMAL CHARACTERISTICS Parameters / Test Conditions Thermal Resistance, Ambient-to-Case 2N2369A; 2N4449 UA, UB, UBC U Note: 1. 2. 3. 4. 5. Derate linearly 2.06 mW/C above TA = +25C.
2N2369A. 2N3227 2N4449. NPN Silicon Small-Signal Transistors . . designed for general-purpose switching applications. MAXIMUM RATINGS Rating Symbal | 2N2369A 2N3227 2N4440 Unit Collector-Emitter Voltage VcEo 15 20 15 Vde 2N2368A, 2N3227 CASE 22-03, STYLE 4 | Ve 1 Collector-Emitter Voltage Voces 40 40 40 Vde TO: a'(TO-18) Collector-Base Voltage Voso 40 40 40 Vde Emitter-Base Voltage VEBO 45 6.0 45 Vdc Total Device Dissipation Pr @ Ta = 25C . 360 360 300 mw Derate above 25C 2.06 a 71 | mwre 1.2 1.2 15 Watts @ Tc = 25C 6.85 6.85 856 | wc Derate above 25C 2N6449 CASE 26-03 Operating Junction and Storage Ty Tatg -65 to 200 C TO-206AB (TO-46) Temperature Range ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) Characteristic Symbol | main Max | Unit OFF CHARACTERISTICS Coltector-Emitter Breakdown Voltage(") ViBRYCEO ae (Ic = 10 mAdc, ig = 0) 2N2I69A, 2N4449 15 _ 2N3227 20 a Collactor-Emitter Breakdown Voltage ViBRICES 40 _ Vde (Ig = 10 pAde, Ig = 0) Collector-Aasa Breakdown Voit
@ Ic Rated Ic Package JANS2N930 JANS2N930UB JANS2N2218 JANS2N2218A JANS2N2218AL JANS2N2219 JANS2N2219A JANS2N2219AL JANS2N2221A JANS2N2221AL JANS2N2221AUA JANS2N2221AUB JANS2N2221AUBC JANS2N2222A JANS2N2222AL JANS2N2222AUA JANS2N2222AUB JANS2N2222AUBC JANS2N2369A JANS2N2369AU JANS2N2369AUA JANS2N2369AUB JANS2N2369AUBC JANS2N2484 JANS2N2484UA JANS2N2484UB JANS2N2484UBC JANS2N3019 JANS2N3019S JANS2N3057A JANS2N3439 JANS2N3439L JANS2N3439UA JANS2N3440 JANS2N3440L JANS2N3440UA JANS2N3498 JANS2N3498L JANS2N3499 JANS2N3499L JANS2N3500 JANS2N3500L JANS2N3501 JANS2N3501L JANS2N3501UB JANS2N3700 JANS2N3700UB JANS2N4449 /253 /253 /251 /251 /251 /251 /251 /251 /255 /255 /255 /255 /255 /255 /255 /255 /255 /255 /317 /317 /317 /317 /317 /376 /376 /376 /376 /391 /391 /391 /368 /368 /368 /368 /368 /368 /366 /366 /366 /366 /366 /366 /366 /366 /366 /391 /391 /317 NPN SS NPN SS NPN SS NPN SS NPN SS NPN SS NPN SS NPN SS NPN SS NPN SS NPN SS NPN SS NPN SS NPN SS NPN