1N916B Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio... 1 of 2 http://www.americanmicrosemi.com/information/spec/?ss_pn=1N916B HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 1N916B Availability Online Store Diodes Buy 1N916B at our online store! Transistors Integrated Circuits Lanuage Translator: Did you Know... Thyristors Category Diodes Products Class High-Speed/Fast Recovery Diodes Search for Parts Type General Purpose Request a Quote Military/High-Rel : N Testimonials Store Policies Contact Us that kind of inventory, we we've got the right part for the job! To find out for I(O) Max.(A) Output Current : 150m FAQs Company 17,000,000 electronic components sitting on our can almost guarantee that Tutorials Shipping AMS has more than warehouse shelves? With 1N916B Specifications Information Spec Sheets on Orders above $150.00 1N916B Information Optoelectronics Test Houses Special Offer
1N916B HIGH CONDUCTANCE FAST DIODES Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit WIV 75 V Average Rectified Current IO 200 mA DC Forward Current IF 300 mA Recurrent Peak Forward Current if 400 mA if(surge) if(surge) 1 4 A A PD 500 3.33 mW o mW/ C RJA 300 Tj 175 O -65 to +200 O Working Inverse Voltage Peak Forward Surge Current Pulse width = 1 second Pulse width = 1 microsecond Total Device Dissipation o Derate above 25 C Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Range TS o C/W C C SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 31/12/2002 1N916, 1N916A, 1N916B Characteristics at TA = 25oC Symbol Min. Typ. Max. Unit at IR = 100A BV 100 - at IR = 5A BV 75 - - V V IR - - at VR = 20V, TA = 150 C IR - - at VR = 75V IR - - 25 50 5 nA A A 730 1 1 1 mV V V V Breakdown Voltage Reverse Current at VR = 20V o Forward Voltage at IF = 5mA <
1N916B HIGH CONDUCTANCE FAST DIODES Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit WIV 75 V Average Rectified Current IO 200 mA DC Forward Current IF 300 mA Recurrent Peak Forward Current if 400 mA if(surge) if(surge) 1 4 A A PD 500 3.33 mW o mW/ C RJA 300 Tj 175 O -65 to +200 O Working Inverse Voltage Peak Forward Surge Current Pulse width = 1 second Pulse width = 1 microsecond Total Device Dissipation o Derate above 25 C Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Range TS o C/W C C SEMTECH ELECTRONICS LTD. (R) (Subsidiary of Semtech International Holdings Limited, acompany listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 31/12/2002 1N916, 1N916A, 1N916B Characteristics at TA = 25oC Symbol Min. Typ. Max. Unit at IR = 100A BV 100 - at IR = 5A BV 75 - - V V IR - - at VR = 20V, TA = 150 C IR - - at VR = 75V IR - - 25 50 5 nA A A 730 1 1 1 mV V V V Breakdown Voltage Reverse Current at VR = 20V o Forward Voltage at IF = 5mA
ard Surge Current Pulse Width = 1.0 ps 4.0A Pulse Width = 1.0s 1.0A ELECTRICAL CHARACTERISTICS (25 c Ambient Temperature unless otherwise noted) SYMBOL CHARACTERISTIC MIN MAX UNITS. TEST CONDITIONS Vv. Forward Voltage 1N914B, 1N4448 0.62 0.72 Vv |, =5.0mA 1N916B, 1N4449 0.63 0.73 Vv |, = 5.0 mA 1N914, 1N916, 1N4148, 1N4149 1.0 Vv ,=10mA INS14A, INSTGA, 1N4446, 1N4447 1.0 V |, = 20 mA 1N916B, 1N4449 1.0 Vv |, =30mA 1N914B, 1N4448 1.0 Vv |, = 100 mA I, Reverse Current 25 nA V,=20V 50 HA V,, = 20 V, T,= 150 C 5.0 pA V,=75V By Breakdown Voltage 100 Vv I, = 100 pA 75 V 1, = 5.0 pA Tha Reverse Recovery Time 4.0 ns |, = 10 mA, V, =6.0 V R, = 100 Q Rec. to 1.0mA Cc Capacitance 1N914, 1N914A, 1N914B, 1N4148, 1N4446, 1N4447 4.0 pF V, = 0, f = 1 MHz 1N916, 1N916A, 1N916B, 1N4149, 1N4448, 1N4449 2.0 pF V, = 0, f= 1 MHz Vea Peak Forward Recovery Voltage 1N914, 1N916, 1N914B, 1N916B, 1N4448, 1N4449 2.5 Vv 50 mA Peak Square Wave . 0.1 ps pulse width 5 kHz - 100 kHz rep. ra
ard Surge Current Pulse Width = 1.0 ps 4.0A Pulse Width = 1.0s 1.0A ELECTRICAL CHARACTERISTICS (25 c Ambient Temperature unless otherwise noted) SYMBOL CHARACTERISTIC MIN MAX UNITS, TEST CONDITIONS V, Forward Voltage 1N914B, 1N4448 0.62 0.72 V |, = 5.0 mA 1N916B, 1N4449 0.63 0.73 Vv |, =5.0 mA 1N914, 1N916, 1N4148, 1N4149 1.0 Vv |, =10mA 1N914A, INQ1GA, 1N4446, 1N4447 1.0 Vv |, =20mA 1N916B, 1N4449 1.0 Vv |, =30mA 1N914B, 1N4448 1.0 Vv {, = 100 mA la Reverse Current 25 nA V, = 20 V 50 pA V,, = 20 V, T,= 150 C . 5.0 pA V, = 75V B, Breakdown Voltage 100 Vv I, = 100 pA 75 Vv 1, = 5.0 pA Tr Reverse Recovery Time 4.0 ns |. = 10 mA, V, = 6.0 V : R, = 100 Q Rec. to 1.0 mA c Capacitance 1N914, 1NQ14A, 1N914B, 1N4148, 1N4446, 1N4447 4.0 pF V, = 0, f= 1 MHz 1N916, 1N916A, 1N916B, 1N4149, 1N4448, 1N4449 2.0 pF . V, = 9, f= 1 MHz Vin Peak Forward Recovery Voltage 1N914, 1N916, 1N914B, 1N916B, 1N4448, 1N4449 2.5 Vv 50 mA Peak Square Wave . 0.1 ps pulse width 5 kHz - 100
e lo Average Rectified Current it DC Forward Current if Recurrent Peak Forward Current i(surge) Peak Forward Surge Current Pulse Width = 1.0 s Pulse Width = 1.0 HS PACKAGES 1N914 DO-35 iN916 DO-35 1N914A DO-35 1N914B DO-35 * 65 to +200C IN916A DO-35 +175C 1N916B DO-35 +260C 1N4148 DO-35 1N4149 DO-385 _ 1N4446 DO-35 Bo 3.38 Wie 1N4447 DO-35 B 1N4448 DO-35 1N4449 DO-35 75V FDLL914 LL-34 200 mA FDLL916 LL-34 soe mA FDLL914A LL-34 FDLL914B LL-34 LOA FDLL916A LL-34 4.04 FDLL9i6B LL-34 FDLL4148 LL-34 FDLL4149 LL-34 FDLL4446 LL-34 FDLL4447 LL-34 FDLL4448 LL-34 FDLL4449 LL-34 ELECTRICAL CHARACTERISTICS (25C Ambient Temperature uniess otherwise noted) If you need this device in the SOT package, an electical equivalent is available. See FDSO1200 family. SYMBOL CHARACTERISTIC MIN MAX UNITS TEST CONDITIONS BV Breakdown Voltage 100 Vv IR = 100 pA 76 v IR = 6.0 pA IR Reverse Current 25 nA VR = 20V 50 uA VR = 20V, Ta = 160C 5.0 BA VR =75V Ve Forward Voltage 1N914B, 1N4448 0.62 0.72 Vv IF = 5.0 mA INS 16B, 1N444
936 NJS 1N957B 5.325 3152 AT 1N941B 1N935 NJS QS2 SEI SES SES 100.999 1-99 Part No. 1N941A 1N938B 1N928 NJS QS2 0.700 0.680 1N938 1N927 NJS QS2 NJS QS2 1N935B 1N923 1N914A T/R PHIL 0.076 0.029 ec 1N917 NJS QS2 1N914A QS2 SEI 0.100 0.037 0.026Aw 0100 0.050 1N916BR NJS QS2 1 N914.1R NJS NSC 0.150 0.037 0.037 AO 0.150 0.065 0.025 z 0.114 0.038 AT 1N92 JAN NSC 0.030 0.020.w 1N916B.IR SES 1N914.1R INLSC AC) 1N916B 1N914 T/R NSC 0.030 0.030 1N916A.IR NSC JANTXV PHIL 0.039 BC 1N916B T/R 1N914 NiSC NJS NSC QS2 SEI JAN 1N914 N 1N916A NSC 0.064 0.024 sc 0.057 1 N916.1R NSC NJS QS2 100999 1N934 1N916 T/R 1N912A 1-99 MOT 0.400 0400 AS 0.160 NJS 0.070 no 0.150 Q52 0.070 AO 0.200 SEI 0.090 AT 0.400 0.28088 0.100 0.100 0.130
1N916B HIGH CONDUCTANCE FAST DIODES Max. 0.5 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. Black "ST" Brand XXX Max. 3.9 ST Min. 27.5 Glass Case DO-35 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Maximum Repetitive Reverse Voltage VRRM 100 V Average Rectified Current IF(AV) 200 mA IFSM 1 4 A Total Power Dissipation Ptot 500 mW Thermal Resistance, Junction to Ambient RJA 300 Junction Temperature Tj 175 O Storage Temperature Range TS - 65 to + 200 O Peak Forward Surge Current at Pulse Width = 1 s at Pulse Width = 1 s C/W O C C Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit V(BR)R 100 75 - V IR - 25 5 50 nA A A VF VF VF VF 0.63 - 0.73 1 1 1 Total Capacitance at VR = 0, f = 1 MHz CT - 2 pF Reverse Recovery Time at IF = 10 mA, VR = 6 V (60 mA), IRR = 1 mA, RL = 100 trr - 4 ns Reverse Breakdown Voltage at IR = 100 A at IR = 5 A Reverse Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150 OC Forward Voltage at IF = 5 mA at IF = 10 mA at IF
MIN DUAENSIONS ARE IN INCHES NOTE: WITHIN THESE ZONES DIAMETER OF EACH LEAD $5 UNCONTROLLED 2005 oy 99290 0075 0195 9.020 0.002 DIA 2 LEADS absolute maximum ratings at specified free-air temperature 1N914 1N916 1N914A | 1N915) 1N916A | 1N917 | UNIT 1N914B 1N916B Working Peak Reverse Voltage fram 65C to 150C 75* 50* 75* 30* Vv a: [at (or below) 25C 75* 75* 75* 50* } s mA Average Rectified Forward Current (See Note Wee 150C 10 10 10 10 Peak Surge Current, 1 Second at 25C (See Note 2) 500 500 500* 300 mA Continuous Power Dissipation at (or below) 25C (See Note 3) 250 250 250 250 mW Operating Free-Air Temperature Range 65 to 175 C Storage Temperature Range 65 to 200* C Lead Temperature 1/16 Inch from Case for 10 Seconds 300 C NOTES: 1. Thase values may be applied continuously under a single-phase 60-Hz half-sine-wave operation with resistive load, 2. These values apply for a one-second square-wave pulse with the devices at nonoperating thermal equilibrium immediately prior to the surge. 3. Derate lin
lume, Standard EOL 2903 1N916 SOD27 Switching Diode 933047310133 30-06-99 31-12-99 (1N914) M, 6 Type insufficient Volume, Standard EOL 2904 1N916 SOD27 Switching Diode 933047310143 30-06-99 31-12-99 (1N914) M, 6 Type insufficient Volume, Standard EOL 2905 1N916B SOD27 Switching Diode 933051090113 30-06-99 31-12-99 (1N914) M, 6 Type insufficient Volume, Standard EOL 2906 1N916B SOD27 Switching Diode 933051090133 30-06-99 31-12-99 (1N914) M, 6 Type insufficient Volume, Standard EOL 2907 1N916B SOD27 Switching Diode 933051090143 30-06-99 31-12-99 (1N914) M, 6 Type insufficient Volume, Standard EOL 2908 2N5088/FD None Noted Transistor 934029760126 30-06-99 31-12-99 None Noted M, 6 Custom type insufficient volume, Standard EOL CONDITIONS (CODES) Non Mfg. (1) Ltd. to Availability (2) Sole Source (S) Multisource (M) Part Package (4) End Prod Packing (5) Standard EOL (6) Other Spec. (7) (Lmt. Avail = 1st come, 1st serve) 12 NC NUMBER COMMENTS PHILIPS SEMICONDUCTORS PRODUCT DISCO
14 D1N914/27C/RAD DIODE.SLB * * Diodes and Rectifiers 1N914A D1N914A DIODE.SLB * * Diodes and Rectifiers 1N914B D1N914B DIODE.SLB * * Diodes and Rectifiers 1N916 D1N916 DIODE.SLB * * Diodes and Rectifiers 1N916A D1N916A DIODE.SLB * * Diodes and Rectifiers 1N916B D1N916B DIODE.SLB * * Diodes and Rectifiers 1S1553 D1S1553 JDIODE.SLB * * Diodes and Rectifiers 1S1554 D1S1554 JDIODE.SLB * * New for 8.0 Device Type Generic Name Diodes and Rectifiers Mfg. Name Symbol Name Library 1S1555 D1S1555 Diodes and Rectifiers 1S1585 Diodes and Rectifiers Tech Type Model Package JDIODE.SLB * * D1S1585 JDIODE.SLB * * 1S1586 D1S1586 JDIODE.SLB * * Diodes and Rectifiers 1S1587 D1S1587 JDIODE.SLB * * Diodes and Rectifiers 1S1588 D1S1588 JDIODE.SLB * * Diodes and Rectifiers 1S2092 D1S2092 JDIODE.SLB * * Diodes and Rectifiers 1S2095A D1S2095A JDIODE.SLB * * Diodes and Rectifiers 1S2186 D1S2186 JDIODE.SLB * * Diodes and Rectifiers 1S2460 D1S2460 JDIODE.SLB * * Diodes and Rectifiers 1S2461 D1S2461 JDIODE.SLB
ient Electrical Characteristics @ 25OC Unless Otherwise Specified Peak Reverse Voltage Average Rectified Forward Current Power Dissipation Junction Temperature Peak Forward Surge Current Breakdown Voltage Maximum Instantaneous Forward Voltage 1N916 1N916A 1N916B 1N916B Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance Reverse Recovery Time Revision: 3 VRM 100V D IF(AV) 200mA PTOT TJ IFSM 500mW 150OC 1.0A 4.0A 100 75 VR A Pulse Width=1.0s Pulse Width=1.0ms IR=100uA IR=5.0uA Cathode Mark B D VF IR 1.0V 1.0V 1.0V 730mV 25nA 5.0uA 50uA CT 2.0pF Trr 4.0nS TJ = 25OC* IFM = 10mA; IFM = 20mA; IFM = 20mA; IFM = 5.0mA; TJ=25OC, V R=20V VR=75V, VR=20V, TJ=150 OC Measured at 1.0MHz, VR=0 IF=10mA VR = 6V, Irr=1.0mA RL=100 OHM C DIMENSIONS DIM A B C D INCHES MIN ------1.000 MAX .166 .079 .020 --- www.mccsemi.com MM MIN ------25.40 MAX 4.2 2.00 .52 --- NOTE 2002/12/31 MCC 1N916(A)(B) 160 120 o o T a= 25 C Reverse Current, IR [nA] Reverse Voltage, VR [V] Ta=25 C 15
1N916B 1N914/916/4148 1N914A/916A 1N916B 1N914B/4448 Reverse Recovery Time Min. IR = 100 A IR = 5.0 A 100 75 IF = 5.0mA IF = 5.0mA IF = 10mA IF = 20mA IF = 20mA IF = 100mA 620 630 Max. Units V V 720 730 1.0 1.0 1.0 1.0 mV mV V V V V VR = 20V VR = 20V, TA = 150 C VR = 75V 25 50 5.0 nA A A VR = 0, f = 1.0MHz VR = 0, f = 1.0MHz 2.0 4.0 pF pF IF = 10mA, VR = 6.0V (600mA) Irr = 1.0mA, RL = 100 4.0 ns * Non-recurrent square wave PW = 8.3ms Typical Characteristics 120 160 o o Ta= 25 C [nA] 150 100 140 80 Reverse Current, I Reverse Voltage, V R R [V] Ta=25 C 130 120 60 40 20 110 1 2 3 5 10 20 30 50 0 100 10 20 30 50 Reverse Voltage, VR [V] Reverse Current, IR [uA] 70 100 GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature Figure 1. Reverse Voltage vs Reverse Current BV - 1.0 to 100 A Figure 2. Reverse Current vs Reverse Voltage IR - 10 to 100V 750 550 o Ta= 25 C o 650 Forward Voltage, V Forward Voltage, V 450 400 350 300
48 1N4448 1N899 1N90 1N900 1N901 1N902 1N903 1N903A 1N904 1N904A 1N904AM 1N904M 1N905 1N905A 1N905AM 1N905M 1N906 1N906A 1N906AM 1N906M 1N907 1N907A 1N907AM 1N907M 1N908 1N908A 1N908AM 1N908M 1N909 1N910 1N911 1N914 1N914A 1N914B 1N914M 1N915 1N916 1N916A 1N916B 1N918 1N919 1N920 1N921 1N922 1N923 1N924 1N925 1N926 1N927 1N928 1N930 1N3070 1N4454 1N3070 1N3070 1N3070 1N4148 1N4154 1N4154 1N4154 1N4154 1N4154 1N4154 1N4154 1N4154 1N4154 1N4149 1N4447 1N4447 1N4447 1N4149 1N4448 1N4447 1N4149 1N3070 1N4447 1N4447 1N4149 1N4448 1N4448 1N4448 1N914 1N914A 1N914B 1N914 1N3070 1N916 1N916A 1N916B 1N914 1N3070 FDH400 FDH400 FDH400 FDH400 1N483B 1N4148 1N4148 1N4148 1N3070 1N4446 Diode Cross-Reference Guide (continued) Industry Part Number Recommended Fairchild Device Industry Part Number Recommended Fairchild Device Industry Part Number Recommended Fairchild Device 1N931 1N932 1N933 1N934 1N948 1N949 1N95 1N957 1N957A 1N957B 1N958 1N958A 1N958B 1N959 1N959A 1N959B 1N96 1N960 1N960A 1N960B 1
200 65~ 200 65~200 $ 1N4154 35 25 450 150 200 2 00 200 65~ 200 65~ 200 3 Aa 1N4446 1NQ14A 100 75 450 150 200 2 500 200 65~200 65~200 1N4447 1N916A 160 75 450 150 200 2 500 200 65~200 65~200 1N4448 1N914B 100 75 450 150 200 2 500 200 65~ 200 65~200 1N4449 1N916B 100 75 450 150 200 2 500 200 65~200 65~200 1N4450 40 30 600 200 250 4 500 200 65~ 200 65~ 200 1N4454 1N3064 75 50 450 150 200 2 500 200 65~200 65~ 200 1N4606 85 70 600 200 250 4 500 200 65~ 200 65~ 200 @ ZRH HHH Electrical Characteristics (Ta=25C) Ve tv) BV(V)Min. Ip (WA) Max. Cr (pF) | ter tns) Type @|e|le|]|e|lele}le|le|e;|e|lel|le|lel|e @ase @ 180C | va=o | VR 0.1mA | O.25mMA | 1MA 2mA SmA | 10mA | 20mA | 30mA | SOmA | 100mA | 200mA | 250mA | SpA |100 pA vr (V) Ve} f=1MHz FR, =1000 4N4148 NGI 75 | 100 [2.9251 20 | soo | 20 4 10 1 5.0 75 4 4 1N41491NQ16 ~ | 109 29251 20 | sog | 20 4 1 10 1 75 75 2 4 0.54 0.66 0.76 0.82 0.87 1N4150 = 1N3600 = 50 Ot 50 100.0 50 25 4 0.62] 0.74 0.86] / 0.92 1.0} 1N4151 1N3604 75 _ 0.05 50. 50.0 50 2 2 1.0