.0022uF 20 4 D1, D53, D54, D55 LGS260-DO 21 1 D2 FMMD914 22 40 D3, D4, D5, D6, D7, D8, D9, D10, D11, D12, D13, D14, D15, D16, D17, D18, D19, D20, D21, D22, D33, D34, D35, D36, D37, D38, D39, D40, D41, D42, D43, D44, D45, D46, D47, D48, D49, D50, D51, D52 D1N916A 23 10 D23, D24, D25, D26, D27, D28, D29, D30, D31, D32 D1N916 24 1 D56 BZX84C2V7 25 1 D57 BZX84C2V4 26 1 D58 1N5817 27 6 FB1, FB2, FB3, FB4, FB5, FB6 BLM41A800S 28 2 FB8, FB7 CB70 29 2 F1, F2 SMD125-002 30 1 JP1 FLOPPY HEADER 17X2 31 1 JP2 1x4 32 1 J1 EPM DRAM Conn 140-Pin 33 1 J2 EPM PCI Conn 120-Pin 34 1 J3 Embedded Processor Module DRAM Conn 140-Pin 35 1 J4 Embedded Processor Module PCI Conn 120-Pin 36 2 J6, J5 Molex 71736-00011 IDE Conn 37 1 J7 38 2 J9, J8 PCI Conn 39 1 J10 ISA Conn A 40 1 J11 ISA Conn B 41 1 J12 PS2 STACK 42 4 J13, J14, J17, J23 1x2 43 3 J15, J24, J25 1x3 44 1 J16 1x1 45 1 J18 SERIAL STACK 46 1 J19 DB25 47 1 J20 CONNECTOR DB15HD 48 1 J21 JUMP3 49 1 J22 ATX POW CONN 50 1 J26 PCMCIA Connector 51 2 L1, L2 INDUCTOR 52 2
1N916A, 1N916B HIGH CONDUCTANCE FAST DIODES Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit WIV 75 V Average Rectified Current IO 200 mA DC Forward Current IF 300 mA Recurrent Peak Forward Current if 400 mA if(surge) if(surge) 1 4 A A PD 500 3.33 mW o mW/ C RJA 300 Tj 175 O -65 to +200 O Working Inverse Voltage Peak Forward Surge Current Pulse width = 1 second Pulse width = 1 microsecond Total Device Dissipation o Derate above 25 C Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Range TS o C/W C C SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 31/12/2002 1N916, 1N916A, 1N916B Characteristics at TA = 25oC Symbol Min. Typ. Max. Unit at IR = 100A BV 100 - at IR = 5A BV 75 - - V V IR - - at VR = 20V, TA = 150 C IR - - at VR = 75V IR - - 25 50 5 nA A A 730 1 1 1 mV V V V Breakdown Voltage Reverse Current at VR = 20V o Forward Voltage at IF
1N916A, 1N916B HIGH CONDUCTANCE FAST DIODES Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit WIV 75 V Average Rectified Current IO 200 mA DC Forward Current IF 300 mA Recurrent Peak Forward Current if 400 mA if(surge) if(surge) 1 4 A A PD 500 3.33 mW o mW/ C RJA 300 Tj 175 O -65 to +200 O Working Inverse Voltage Peak Forward Surge Current Pulse width = 1 second Pulse width = 1 microsecond Total Device Dissipation o Derate above 25 C Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Range TS o C/W C C SEMTECH ELECTRONICS LTD. (R) (Subsidiary of Semtech International Holdings Limited, acompany listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 31/12/2002 1N916, 1N916A, 1N916B Characteristics at TA = 25oC Symbol Min. Typ. Max. Unit at IR = 100A BV 100 - at IR = 5A BV 75 - - V V IR - - at VR = 20V, TA = 150 C IR - - at VR = 75V IR - - 25 50 5 nA A A 730 1 1 1 mV V V V Breakdown Voltage Reverse Current at VR = 20V o Forward Voltage at IF
1N916A High conductance ultra fast switching diode. Working inverse voltage 75 V. 0.5... Page 1 of 1 Enter Your Part # Home Part Number: 1N916A Online Store 1N916A Diodes High conductance ultra fast switching diode. Working Transistors inverse voltage 75 V. Integrated Circuits Optoelectronics Thyristors Products Search for Parts In Stock 6 Brand New Available from $ 0.50 Request a Quote Information Manufacturer Partnumber: 1N916A Spec Sheets List Price: $ 0.62 Tutorials Shipping FAQs Our Price: $ 0.50 You Save: $ 0.12 Company Testimonials Americanmicrosemi Total Price $ 0.50 Store Policies Contact Us Quantity to Order: 1 SHOP WITH CONFIDENCE All Parts are Brand New! 100% Secure, SSL Encryption! Ships in 1-2 business days FREE UPS GROUND SHIPPING US48 Submit Enter code INTER3 at checkout.** CUSTOMER TESTIMONIALS 1) AMS had the parts that were very difficult to find! 2) Their price was very reasonable (unlike other vendors). 3) Their low free shipping threshol
D1N914/27C DIODE.SLB * * Diodes and Rectifiers 1N914 D1N914/27C/RAD DIODE.SLB * * Diodes and Rectifiers 1N914A D1N914A DIODE.SLB * * Diodes and Rectifiers 1N914B D1N914B DIODE.SLB * * Diodes and Rectifiers 1N916 D1N916 DIODE.SLB * * Diodes and Rectifiers 1N916A D1N916A DIODE.SLB * * Diodes and Rectifiers 1N916B D1N916B DIODE.SLB * * Diodes and Rectifiers 1S1553 D1S1553 JDIODE.SLB * * Diodes and Rectifiers 1S1554 D1S1554 JDIODE.SLB * * New for 8.0 Device Type Generic Name Diodes and Rectifiers Mfg. Name Symbol Name Library 1S1555 D1S1555 Diodes and Rectifiers 1S1585 Diodes and Rectifiers Tech Type Model Package JDIODE.SLB * * D1S1585 JDIODE.SLB * * 1S1586 D1S1586 JDIODE.SLB * * Diodes and Rectifiers 1S1587 D1S1587 JDIODE.SLB * * Diodes and Rectifiers 1S1588 D1S1588 JDIODE.SLB * * Diodes and Rectifiers 1S2092 D1S2092 JDIODE.SLB * * Diodes and Rectifiers 1S2095A D1S2095A JDIODE.SLB * * Diodes and Rectifiers 1S2186 D1S2186 JDIODE.SLB * * Diodes and Rectifiers 1S2460 D1S2460 JDIODE.SLB *
= 4} iN60A ) Sree an 120 10 1 5 100 Al 1N662 P 100 10 1 1 50 Al 1N662A 100 100 1 20 50 _ Al IN663A 100 10 1 20 50 Al 1N914 15 10 1 0.025 20 _ Al 1IN914A 75 20 1 0.025 20 Al 1N914B 75 100 1 0.025 20 _ Al 1N914E 30 10 1 _ _ _ Al 1N916 75 10 1 0. 025 20 _ Al 1N916A 75 20 1 0. 025 20 _ Al 1N3062 75 20 1 100 50 _ Al 1N3063 15 10 1 100 50 _ Al 1N3064 75 10 0.85 100 50 _ Al 1N3065 75 20 1 100 50 _ Al 1N3066 75 10 1 100 50 _ Al 1N3067 30 5 1 100 20 _ Al 1N3068 30 5 1 100 20 _ Al 1N3069 65 50 1 100 50 _ Al 1N3596 20 30 1 0.1 20 _ Al 1N3600 50 200 1 0.1 50 _ Al 1N3604 15 50 1 0.05 50 _ Al 1N3605 40 20 0. 88 0.05 30 _ Al 1N3606 75 20 0. 88 0. 05 50 _ Switching Al 1N3669 70 400 1.1 0.25 70 _ Al 1N3873 Silicon planar 50 150 0.95 0.1 50 _ Al 1N3956 epitaxial 30 0.1 2.55 0.05 30 Al 1N4009 25 30 1 0.1 25 Al 1N4147 30 30 1 5 30 _ Al 1N4148 75 10 1 0.025 20 _ Al 1N4149 75 10 1 0. 025 20 _ Al 1N4150 50 200 1 0.1 50 Al 1N4151 75 50 1 0. 05 50 _ Al 1N4152 40 20 0. 88 0. 05 30 = Al 1N4153 75 20 0. 88 0.05 50 _ Al 1N41
1N916A, 1N916B HIGH CONDUCTANCE FAST DIODES Max. 0.5 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. Black "ST" Brand XXX Max. 3.9 ST Min. 27.5 Glass Case DO-35 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Maximum Repetitive Reverse Voltage VRRM 100 V Average Rectified Current IF(AV) 200 mA IFSM 1 4 A Total Power Dissipation Ptot 500 mW Thermal Resistance, Junction to Ambient RJA 300 Junction Temperature Tj 175 O Storage Temperature Range TS - 65 to + 200 O Peak Forward Surge Current at Pulse Width = 1 s at Pulse Width = 1 s C/W O C C Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit V(BR)R 100 75 - V IR - 25 5 50 nA A A VF VF VF VF 0.63 - 0.73 1 1 1 Total Capacitance at VR = 0, f = 1 MHz CT - 2 pF Reverse Recovery Time at IF = 10 mA, VR = 6 V (60 mA), IRR = 1 mA, RL = 100 trr - 4 ns Reverse Breakdown Voltage at IR = 100 A at IR = 5 A Reverse Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150 OC Forward Voltage at IF = 5 mA at IF = 10 m
70 1N4148 1N4448 1N899 1N90 1N900 1N901 1N902 1N903 1N903A 1N904 1N904A 1N904AM 1N904M 1N905 1N905A 1N905AM 1N905M 1N906 1N906A 1N906AM 1N906M 1N907 1N907A 1N907AM 1N907M 1N908 1N908A 1N908AM 1N908M 1N909 1N910 1N911 1N914 1N914A 1N914B 1N914M 1N915 1N916 1N916A 1N916B 1N918 1N919 1N920 1N921 1N922 1N923 1N924 1N925 1N926 1N927 1N928 1N930 1N3070 1N4454 1N3070 1N3070 1N3070 1N4148 1N4154 1N4154 1N4154 1N4154 1N4154 1N4154 1N4154 1N4154 1N4154 1N4149 1N4447 1N4447 1N4447 1N4149 1N4448 1N4447 1N4149 1N3070 1N4447 1N4447 1N4149 1N4448 1N4448 1N4448 1N914 1N914A 1N914B 1N914 1N3070 1N916 1N916A 1N916B 1N914 1N3070 FDH400 FDH400 FDH400 FDH400 1N483B 1N4148 1N4148 1N4148 1N3070 1N4446 Diode Cross-Reference Guide (continued) Industry Part Number Recommended Fairchild Device Industry Part Number Recommended Fairchild Device Industry Part Number Recommended Fairchild Device 1N931 1N932 1N933 1N934 1N948 1N949 1N95 1N957 1N957A 1N957B 1N958 1N958A 1N958B 1N959 1N959A 1N959B 1N96 1N960 1N960A 1
076 0.029 ec 1N917 NJS QS2 1N914A QS2 SEI 0.100 0.037 0.026Aw 0100 0.050 1N916BR NJS QS2 1 N914.1R NJS NSC 0.150 0.037 0.037 AO 0.150 0.065 0.025 z 0.114 0.038 AT 1N92 JAN NSC 0.030 0.020.w 1N916B.IR SES 1N914.1R INLSC AC) 1N916B 1N914 T/R NSC 0.030 0.030 1N916A.IR NSC JANTXV PHIL 0.039 BC 1N916B T/R 1N914 NiSC NJS NSC QS2 SEI JAN 1N914 N 1N916A NSC 0.064 0.024 sc 0.057 1 N916.1R NSC NJS QS2 100999 1N934 1N916 T/R 1N912A 1-99 MOT 0.400 0400 AS 0.160 NJS 0.070 no 0.150 Q52 0.070 AO 0.200 SEI 0.090 AT 0.400 0.28088 0.100 0.100 0.130
= 4} iN60A ) Sree an 120 10 1 5 100 Al 1N662 P 100 10 1 1 50 Al 1N662A 100 100 1 20 50 _ Al IN663A 100 10 1 20 50 Al 1N914 15 10 1 0.025 20 _ Al 1IN914A 75 20 1 0.025 20 Al 1N914B 75 100 1 0.025 20 _ Al 1N914E 30 10 1 _ _ _ Al 1N916 75 10 1 0. 025 20 _ Al 1N916A 75 20 1 0. 025 20 _ Al 1N3062 75 20 1 100 50 _ Al 1N3063 15 10 1 100 50 _ Al 1N3064 75 10 0.85 100 50 _ Al 1N3065 75 20 1 100 50 _ Al 1N3066 75 10 1 100 50 _ Al 1N3067 30 5 1 100 20 _ Al 1N3068 30 5 1 100 20 _ Al 1N3069 65 50 1 100 50 _ Al 1N3596 20 30 1 0.1 20 _ Al 1N3600 50 200 1 0.1 50 _ Al 1N3604 15 50 1 0.05 50 _ Al 1N3605 40 20 0. 88 0.05 30 _ Al 1N3606 75 20 0. 88 0. 05 50 _ Switching Al 1N3669 70 400 1.1 0.25 70 _ Al 1N3873 Silicon planar 50 150 0.95 0.1 50 _ Al 1N3956 epitaxial 30 0.1 2.55 0.05 30 Al 1N4009 25 30 1 0.1 25 Al 1N4147 30 30 1 5 30 _ Al 1N4148 75 10 1 0.025 20 _ Al 1N4149 75 10 1 0. 025 20 _ Al 1N4150 50 200 1 0.1 50 Al 1N4151 75 50 1 0. 05 50 _ Al 1N4152 40 20 0. 88 0. 05 30 = Al 1N4153 75 20 0. 88 0.05 50 _ Al 1N41
605 40 30 450 150 200 2 500 200 65~ +200 65~ +200 DO-35 1N4153 1N3606 75 50 450 150 200 2 500 200 ~85~ +200 65~ +200 DO-35 4N4154 35 25 450 150 200 2 500 200 65~ +200 65~ +200 DO-35 1N4446 1NQ14A 100 75 450 150 200 2 500 200 65~ +200 65~ +200 DO-35 1N4447 1N916A 100 75 450 150 200 2 500 200 65~ +200 65~ +200 DO-35 1N4448 1N914B 100 75 450 150 200 2 500 200 65~ +200 65~ +200 DO-35 1N4449 1N916B 100 75 450 150 200 2 500 200 65~ +200 65~ +200 DO-35 1N4450 40 30 600 200 250 4 500 200 65~ +200 65~ +200 DO-35 1N4454 1N3064 75 50 450 150 200 2 500 200 65~ +200 65~ +200 DO-35 2 1N4606 85 70 600 200 250 4 500 200 65~ +200 65~ +200 DO-35 5 1N4531 100 75 450 150 200 2 500 200 65~ +200 65~ +200 DO-34 a 1N4532 70 50 450 150 200 2 500 200 ~65~ +200 65~ +200 DO-34 = 1N4533 40 30 450 150 200 2 500 200 65~ +200 65~ +200 DO-34 & 1N4534 75 50 450 150 200 2 500 200 65~ +200 65~ +200 DO-34 1N4536 35 25 450 150 200 2 500 200 65~ +200 65~ +200 DO-34 os) = o Ve_(V) BV _(V) Min. IR (uA) Max.
, T,= 150 C 5.0 pA V,=75V By Breakdown Voltage 100 Vv I, = 100 pA 75 V 1, = 5.0 pA Tha Reverse Recovery Time 4.0 ns |, = 10 mA, V, =6.0 V R, = 100 Q Rec. to 1.0mA Cc Capacitance 1N914, 1N914A, 1N914B, 1N4148, 1N4446, 1N4447 4.0 pF V, = 0, f = 1 MHz 1N916, 1N916A, 1N916B, 1N4149, 1N4448, 1N4449 2.0 pF V, = 0, f= 1 MHz Vea Peak Forward Recovery Voltage 1N914, 1N916, 1N914B, 1N916B, 1N4448, 1N4449 2.5 Vv 50 mA Peak Square Wave . 0.1 ps pulse width 5 kHz - 100 kHz rep. rate RE Rectification Efficiency 1N914A, 1N914B, 1N916A, 1N916B 45 % 2.0 V rms, f = 100 MHz sy 6 Lake Street ; P.O. Box 1436 : Lawrence, MA. 01841 ai Telephone (617) 681-0392 : TeleFax (617) 681-9135 : Telex 928377 fant ll|| BKC International Electronics, Inc.
.0 DO-34 1N4152 1N3600 3.0 75 100 @ 50 1.0 @ 200 2.5 DO-7 1N4150 1N914 4.0 100 25 @ 20 1.0 @ 10 4.0 DO-7 1N4148 IN914A 4.0 100 20 @ 20 1.0 @ 20 4.0 DO-7 1N4446 1N914B 4.0 100 25 @ 20 1.0 @ 100 4.0 DO-7 1N4448 1N916 4.0 100 25 @ 20 1.0 @ 10 2.0 DO-7 1N4149 1N916A 4.0 100 20 @ 20 1.0 @ 20 2.0 DO-7 1N4447 1N916B 4.0 100 25 @ 20 1.0 @ 30 2.0 DO-7 1N4449 1N4148 4.0 100 25 @ 20 1.0 @ 10 4.0 DO-35 1N914 1N4149 4.0 100 25 @ 20 1.0 @ 10 2.0 DO-35 1N916 1N4446 4.0 100 25 @ 20 1.0 @ 20 4.0 DO-35 IN914A 1N4447 4.0 100 25 @ 20 1.0 @ 20 2.0 DO-35 1N916A 1N4448 4.0 100 25 @- 20 1.0 @ 100 4.0 DO-35 1N914B 1N4449 4.0 100 25 @ 20 1.0 @ 30 2.0 DO-35 1N916B 1N4531 4.0 100 25 @ 20 1.0 @ 10 4.0 DO-34 1N4148 1N4606 4.0 85 250 @ 70 1,10 @ 250 2:9 DO-35 1N4607 4.0 85 200 @ 70 L.10 @ 400 4.0 ~DOQ-35 1N4610 4.0 80 100 @ 55 1.0 @ 200 2.0 DO-7 1N3604 4.0 7d 50 @ 50 1.0 @ 50 2:0 DO-7 1N4151 1N4151 4.0 75 50 @ 50 1.0 @ 50 2.0 DO-35 1N3604 FD100 4.0 | 15 100 @ 50 1.0 @ 10 20 DO-7 FD600 4.0 75 100 @ 50 1.0 @ 200 2:0
1N916A, 1N916B HIGH CONDUCTANCE FAST DIODES Max. 0.5 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. Black "ST" Brand XXX Max. 3.9 ST Min. 27.5 Glass Case DO-35 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Maximum Repetitive Reverse Voltage VRRM 100 V Average Rectified Current IF(AV) 200 mA IFSM 1 4 A Total Power Dissipation Ptot 500 mW Thermal Resistance, Junction to Ambient RJA 300 Junction Temperature Tj 175 O Storage Temperature Range TS - 65 to + 200 O Peak Forward Surge Current at Pulse Width = 1 s at Pulse Width = 1 s C/W O C C Characteristics at Ta = 25 OC Parameter Reverse Breakdown Voltage at IR = 100 A at IR = 5 A Reverse Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150 OC Forward Voltage at IF = 5 mA at IF = 10 mA at IF = 20 mA at IF = 30 mA LL916B LL916 LL916A LL916B Total Capacitance at VR = 0, f = 1 MHz Reverse Recovery Time at IF = 10 mA, VR = 6 V (60 mA), IRR = 1 mA, RL = 100 Symbol Min. Max. Unit V(BR)R 100 75 - V IR - 25 5 50 n
= 4} iN60A ) Sree an 120 10 1 5 100 Al 1N662 P 100 10 1 1 50 Al 1N662A 100 100 1 20 50 _ Al IN663A 100 10 1 20 50 Al 1N914 15 10 1 0.025 20 _ Al 1IN914A 75 20 1 0.025 20 Al 1N914B 75 100 1 0.025 20 _ Al 1N914E 30 10 1 _ _ _ Al 1N916 75 10 1 0. 025 20 _ Al 1N916A 75 20 1 0. 025 20 _ Al 1N3062 75 20 1 100 50 _ Al 1N3063 15 10 1 100 50 _ Al 1N3064 75 10 0.85 100 50 _ Al 1N3065 75 20 1 100 50 _ Al 1N3066 75 10 1 100 50 _ Al 1N3067 30 5 1 100 20 _ Al 1N3068 30 5 1 100 20 _ Al 1N3069 65 50 1 100 50 _ Al 1N3596 20 30 1 0.1 20 _ Al 1N3600 50 200 1 0.1 50 _ Al 1N3604 15 50 1 0.05 50 _ Al 1N3605 40 20 0. 88 0.05 30 _ Al 1N3606 75 20 0. 88 0. 05 50 _ Switching Al 1N3669 70 400 1.1 0.25 70 _ Al 1N3873 Silicon planar 50 150 0.95 0.1 50 _ Al 1N3956 epitaxial 30 0.1 2.55 0.05 30 Al 1N4009 25 30 1 0.1 25 Al 1N4147 30 30 1 5 30 _ Al 1N4148 75 10 1 0.025 20 _ Al 1N4149 75 10 1 0. 025 20 _ Al 1N4150 50 200 1 0.1 50 Al 1N4151 75 50 1 0. 05 50 _ Al 1N4152 40 20 0. 88 0. 05 30 = Al 1N4153 75 20 0. 88 0.05 50 _ Al 1N41