SI6441DQ-T1-E3
6300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET

From Vishay Presicion Group

StatusACTIVE
Channel TypeP-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min30 V
Drain Current-Max (ID)6.3 A
Drain-source On Resistance-Max0.0150 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package DescriptionTSSOP-8
Number of Elements1
Number of Terminals8
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Surface MountYes
Terminal FinishMATTE TIN
Terminal FormGULL WING
Terminal PositionDUAL
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE SMALL SIGNAL

External links