BF966 N-Channel, Dual-Gate Tetrode MOSFET
From Various
| @I(D) (A) (Test Condition) | 10m |
| @V(DS) (V) (Test Condition) | 15 |
| Absolute Max. Power Diss. (W) | 225m |
| C(iss) Max. (F) | 2.6p |
| I(D) Abs. Drain Current (A) | 30m |
| I(DSS) Min. (A) | 20m |
| I(GSS) Max. (A) | 50n |
| Package | SOT-103 |
| V(BR)DSS (V) | 20 |
| g(fs) Max, (S) Trans. conduct, | 17m |
| g(fs) Min. (S) Trans. conduct. | 15m |
