BCP53-10T/R Si PNP Power BJT
From Philips Semiconductors / NXP Semiconductors
@I(C) (A) (Test Condition) | 150m |
@V(CE) (V) (Test Condition) | 2.0 |
Absolute Max. Power Diss. (W) | 1.5 |
I(C) Abs.(A) Collector Current | 1.0 |
I(CBO) Max. (A) | 100n |
Military | N |
Package | SOT-223 |
V(BR)CBO (V) | 100 |
V(BR)CEO (V) | 80 |
f(T) Min. (Hz) Transition Freq | 50M |
h(FE) Max. Current gain. | 160 |
h(FE) Min. Static Current Gain | 63 |