Product Datasheet Search Results:

PHC21025T/R.pdf1 Pages, 40 KB, Original
PHC21025T/R
N/a
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
PHC21025,118.pdf16 Pages, 821 KB, Original
PHC21025,118
Nexperia
Trans MOSFET N/P-CH 30V 3.5A/2.3A 8-Pin SO T/R
PHC21025.pdf16 Pages, 244 KB, Original
PHC21025
Nxp Semiconductors
MOSFET N/P-CH 30V SOT96-1 - PHC21025,118
PHC21025,118.pdf16 Pages, 244 KB, Original
PHC21025,118
Nxp Semiconductors
MOSFET N/P-CH 30V SOT96-1 - PHC21025,118
PHC21025T/R.pdf16 Pages, 244 KB, Original
PHC21025T/R
Nxp
3500 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
PHC21025.pdf16 Pages, 120 KB, Original
PHC21025
Philips Semiconductors / Nxp Semiconductors
Complementary Enhancement Mode MOS Transistor
PHC21025T.pdf16 Pages, 120 KB, Original
PHC21025T
Philips Semiconductors / Nxp Semiconductors
Transistor Mosfet N-CH/P-CH 30V 3.5A 8SOT-96-1 T/R
PHC21025/T3.pdf16 Pages, 120 KB, Original
PHC21025/T3
Philips Semiconductors / Nxp Semiconductors
Transistor Mosfet N-CH/P-CH 30V 3.5A 8SOT-96-1 T/R

Product Details Search Results:

Nexperia/PHC21025,118
{"Polarity":"N/P","Gate-Source Voltage (Max)":"20(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Power Dissipation":"2(W)","Operating Temp Range":"-65C to 150C","Package Type":"SO","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"2"}...
1361 Bytes - 08:23:49, 13 December 2024
Nxp.com/PHC21025
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.5 A","EU RoHS Compliant":"Yes","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1000 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL AND P-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"ME...
1501 Bytes - 08:23:49, 13 December 2024
Nxp.com/PHC21025,118
927 Bytes - 08:23:49, 13 December 2024
Nxp.com/PHC21025 /T3
{"Polarity":"N/P","Gate-Source Voltage (Max)":"20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Mounting":"Surface Mount","Noise Figure":"Not Required dB","Drain-Source On-Volt":"30 V","Frequency (Max)":"Not Required MHz","Power Gain ":"Not Required dB","Power Dissipation":"2 W","Operating Temp Range":"-65C to 150C","Package Type":"SO","Output Power (Max)":"Not Required W","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"2","Drain Efficienc...
1537 Bytes - 08:23:49, 13 December 2024
Nxp.com/PHC21025T/R
{"Status":"ACTIVE","Channel Type":"N-CHANNEL AND P-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"PLASTIC, MS-012, SOP-8","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"3.5 A","Transistor Application":"SWITCHING","Number of Elements":"2","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape...
1414 Bytes - 08:23:49, 13 December 2024
Semiconductors.philips.com/PHC21025T/R
{"C(iss) Max. (F)":"250p","Absolute Max. Power Diss. (W)":"2","@V(GS) (V) (Test Condition)":"10","r(DS)on Max. (Ohms)":".1","@V(DS) (V) (Test Condition)":"20","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"4.5","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"2.2","V(GS)th Max. (V)":"2.8","V(GS)th Min. (V)":"1","Package":"SO","I(DSS) Max. (A)":"100n","V(BR)DSS (V)":"30","Thermal Resistance Junc-Amb.":"35","@Temp (°C) (Test Condition)":"25"}...
1037 Bytes - 08:23:49, 13 December 2024

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