PDTD113ES,126 TRANS PREBIAS NPN 500MW TO92-3
From NXP Semiconductors
| Category | Discrete Semiconductor Products |
| Current - Collector (Ic) (Max) | 500mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 33 @ 50mA, 5V |
| Datasheets | PDTD113E Series |
| Family | Transistors (BJT) - Single, Pre-Biased |
| Frequency - Transition | - |
| Mounting Type | Through Hole |
| Other Names | 934059141126 PDTD113ES AMO PDTD113ES AMO-ND |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Packaging | Tape & Box (TB) |
| Power - Max | 500mW |
| Product Photos | TO-92-3(StandardBody),TO-226_straightlead |
| Resistor - Base (R1) (Ohms) | 1k |
| Resistor - Emitter Base (R2) (Ohms) | 1k |
| Series | - |
| Standard Package | 2,000 |
| Supplier Device Package | TO-92-3 |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
