NTE575
DIODE SILICON 1000V 1A FAST RECOVERY 70NS DO-41

From NTE Electronics, Inc.

ConfigurationSingle
Diameter2.72 mm
Dimensions2.72 Dia. x 5.33 L mm
Diode TypeSilicon Rectifier
Junction Capacitance15 pF
Length5.33 mm
Maximum Continuous Forward Current1 A
Maximum Operating Temperature+150 °C
Minimum Operating Temperature-65 °C
Mounting TypeThrough Hole
Operating Temperature Range-65 to +150 °C
Package TypeDO-41
Peak Forward Voltage1.5 V
Peak Non Repetitive Forward Surge Current35 A
Peak Reverse Current50 μA
Peak Reverse Recovery Time70 ns
Peak Reverse Repetitive Voltage1000 V
Pin Count2
Recovery Time70 ns
Rectifier TypeSwitching

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