MWT-H773-9 KA BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
From MicroWave Technology, Inc.
| Status | ACTIVE |
| Channel Type | N-CHANNEL |
| Configuration | SINGLE |
| FET Technology | HIGH ELECTRON MOBILITY |
| Feedback Cap-Max (Crss) | 0.0400 pF |
| Highest Frequency Band | KA BAND |
| Number of Elements | 1 |
| Operating Mode | DEPLETION |
| Power Gain-Min (Gp) | 11 dB |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | GALLIUM ARSENIDE |
| Transistor Type | RF SMALL SIGNAL |
