2N2219AJAN NPN GP BJT Transistor
From MICROSEMI
| Category | Bipolar Power |
| Collector Current (DC) | 0.8 A |
| Collector-Base Voltage | 75 V |
| Collector-Emitter Voltage | 50 V |
| DC Current Gain | 50 |
| Emitter-Base Voltage | 6 V |
| Mounting | Through Hole |
| Number of Elements | 1 |
| Operating Temp Range | -55C to 200C |
| Operating Temperature Classification | Military |
| Package Type | TO-39 |
| Pin Count | 3 |
| Power Dissipation | 0.8 W |
| Rad Hardened | No |
| Transistor Polarity | NPN |
