JANTX2N6796 8 A, 100 V, 0.195 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
From International Rectifier
Status | ACTIVE |
Avalanche Energy Rating (Eas) | 4.3 mJ |
Case Connection | DRAIN |
Channel Type | N-CHANNEL |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 100 V |
Drain Current-Max (ID) | 8 A |
Drain-source On Resistance-Max | 0.1950 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Mfr Package Description | HERMETIC SEALED, TO-205AF, 3 PIN |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT |
Package Body Material | METAL |
Package Shape | ROUND |
Package Style | CYLINDRICAL |
Pulsed Drain Current-Max (IDM) | 32 A |
Terminal Finish | NOT SPECIFIED |
Terminal Form | WIRE |
Terminal Position | BOTTOM |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |