IPI90R1K2C3 MOSFET N-CH 900V 5.1A TO-262
From Infineon Technologies
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 5.1A (Tc) |
| Datasheets | IPI90R1K2C3 |
| Drain to Source Voltage (Vdss) | 900V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 28nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 710pF @ 100V |
| Mounting Type | Through Hole |
| Other Names | IPI90R1K2C3XKSA1 SP000413724 SP000683080 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Packaging | Tube |
| Power - Max | 83W |
| Product Photos | TO-262-3 |
| Product Training Modules | CoolMOS™ CP High Voltage MOSFETs Converters |
| Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 2.8A, 10V |
| Series | CoolMOS™ |
| Standard Package | 500 |
| Supplier Device Package | PG-TO262-3 |
| Vgs(th) (Max) @ Id | 3.5V @ 310µA |
