IPG20N06S2L-35 MOSFET 2N-CH 55V 20A TDSON-8-4
From Infineon Technologies
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Datasheets | IPG20N06S2L-35 |
| Drain to Source Voltage (Vdss) | 55V |
| FET Feature | Logic Level Gate |
| FET Type | 2 N-Channel (Dual) |
| Family | FETs - Arrays |
| Gate Charge (Qg) @ Vgs | 23nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 790pF @ 25V |
| Mounting Type | Surface Mount |
| Other Names | IPG20N06S2L35ATMA1 SP000613718 |
| Package / Case | 8-PowerVDFN |
| Packaging | Tape & Reel (TR) |
| Power - Max | 65W |
| Rds On (Max) @ Id, Vgs | 35 mOhm @ 15A, 10V |
| Series | OptiMOS™ |
| Standard Package | 5,000 |
| Supplier Device Package | PG-TDSON-8-4 (5.15x6.15) |
| Vgs(th) (Max) @ Id | 2V @ 27µA |
