HYB39M83200L120 General Purpose Dynamic RAM - Multi-bank DRAM
From Infineon Technologies
| Bits Per Word | 32 |
| Military | N |
| Nom. Supp (V) | 3.3 |
| Number of Words | 256k |
| Output Config | 3-State |
| Package | QCC-J |
| Pins | 68 |
| Technology | CMOS |
| t(acc) Max. (S) | 19n |
