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Infineon.com/ILD30X001
{"Package":"DIP","@V(CE) (V) (Test Condition)":"5.0","P(D) Max.(W) Power Dissipation":"400m","V(BR)CEO (V) Breakdown Voltage":"30","CTR Min.(%)Current Trans.Ratio":"100","@I(F) (A) (Test Condition)":"10m","I(F) Max. (A) Forward Current":"50m","V(F) Max.(V) Forward Voltage":"1.5","Viso Max.(V) Isolation Voltage":"7.5k","I(C) Abs.(A) Collector Current":"125m","Semiconductor Material":"GaAs : Si","t(resp) Max.(s) Response Time":"10u","Number of Channels":"2","I(CEO) Max. (A) Dark Out.Cur.":"1.0n"}...
1014 Bytes - 19:33:38, 15 January 2026
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