2SD1101AB
Si NPN Lo-Pwr BJT

From Hitachi Semiconductor

StatusDiscontinued
@I(C) (A) (Test Condition)150m
@V(CE) (V) (Test Condition)1
Absolute Max. Power Diss. (W)150m
C(obo) (Max) (F)20p
I(C) Abs.(A) Collector Current700m
I(CBO) Max. (A)1u
MilitaryN
PackageSOT-23
V(BR)CBO (V)25
V(BR)CEO (V)20
h(FE) Min. Static Current Gain85

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