HS930CH16H2HO
Silicon Controlled Rectifier - Interdigitated gate structure

From Hind Rectifiers Ltd.

@Temp. (°C) (Test Condition)85
I(GT) Max. (A)250m
I(T) Max.(A) On-state Current930
I(TSM) Max. (A)18k
MilitaryN
PackageTO-200var74
V(DRM) Max.(V)Rep.Pk.Off Volt.1.6k
V(GT) Max.(V)2.2
dv/dt Min. (V/us)400
t(q) Typ. (s)60u

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