Product Details Search Results:

Dla.mil/R2N7269+JAN
{"Absolute Max. Power Diss. (W)":"150","I(D) Abs. Max.(A) Drain Curr.":"16","@V(GS) (V) (Test Condition)":"12","t(d)off Max. (s) Off time":"140n","r(DS)on Max. (Ohms)":"115m","@V(DS) (V) (Test Condition)":"15","I(DM) Max (A)(@25°C)":"104","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"8","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"16","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Package":"TO-254AA","Military":"Y","Mil Number":"R2N7269+JAN","td(on) Max (s) On time delay":"33n","I(DSS...
1275 Bytes - 09:16:38, 17 September 2026
Dla.mil/R2N7269+JANS
{"Absolute Max. Power Diss. (W)":"150","I(D) Abs. Max.(A) Drain Curr.":"16","@V(GS) (V) (Test Condition)":"12","t(d)off Max. (s) Off time":"140n","r(DS)on Max. (Ohms)":"115m","@V(DS) (V) (Test Condition)":"15","I(DM) Max (A)(@25°C)":"104","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"8","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"16","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Package":"TO-254AA","Military":"Y","Mil Number":"R2N7269+JANS","td(on) Max (s) On time delay":"33n","I(DS...
1280 Bytes - 09:16:38, 17 September 2026
Dla.mil/R2N7269+JANTX
{"Absolute Max. Power Diss. (W)":"150","I(D) Abs. Max.(A) Drain Curr.":"16","@V(GS) (V) (Test Condition)":"12","t(d)off Max. (s) Off time":"140n","r(DS)on Max. (Ohms)":"115m","@V(DS) (V) (Test Condition)":"15","I(DM) Max (A)(@25°C)":"104","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"8","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"16","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Package":"TO-254AA","Military":"Y","Mil Number":"R2N7269+JANTX","td(on) Max (s) On time delay":"33n","I(D...
1287 Bytes - 09:16:38, 17 September 2026
Dla.mil/R2N7269+JANTXV
{"Absolute Max. Power Diss. (W)":"150","I(D) Abs. Max.(A) Drain Curr.":"16","@V(GS) (V) (Test Condition)":"12","t(d)off Max. (s) Off time":"140n","r(DS)on Max. (Ohms)":"115m","@V(DS) (V) (Test Condition)":"15","I(DM) Max (A)(@25°C)":"104","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"8","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"16","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Package":"TO-254AA","Military":"Y","Mil Number":"R2N7269+JANTXV","td(on) Max (s) On time delay":"33n","I(...
1293 Bytes - 09:16:38, 17 September 2026
Irf.com/2N7269
{"C(iss) Max. (F)":"4.7n","Absolute Max. Power Diss. (W)":"150","V(BR)DSS (V)":"200","I(D) Abs. Max.(A) Drain Curr.":"16","@V(GS) (V) (Test Condition)":"12","t(d)off Max. (s) Off time":"140n","r(DS)on Max. (Ohms)":"100m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"104","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"8.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"16","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"4.0","V(GS)th Min. (V)":"2.0","Package":"TO-25...
1331 Bytes - 09:16:38, 17 September 2026
Irf.com/2N7269D
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"26 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1050 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"104 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-...
1432 Bytes - 09:16:38, 17 September 2026
Irf.com/2N7269U
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"26 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1050 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"104 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-...
1432 Bytes - 09:16:38, 17 September 2026
Irf.com/JANSF2N7269
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"26 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"104 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Vo...
1513 Bytes - 09:16:38, 17 September 2026
Irf.com/JANSF2N7269D
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"26 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"104 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-...
1481 Bytes - 09:16:38, 17 September 2026
Irf.com/JANSF2N7269U
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"26 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"104 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...
1562 Bytes - 09:16:38, 17 September 2026
Irf.com/JANSF2N7269U/CDDATAPACK
{"Category":"MOSFET","Maximum Drain Source Voltage":"200(Min) V","Typical Turn-Off Delay Time":"140(Max) ns","Description":"Value","Maximum Continuous Drain Current":"26 A","Package":"3SMD-1","Mounting":"Surface Mount","Dose Level":"300 krad","Typical Turn-On Delay Time":"33(Max) ns","Rad Hard":"Yes","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"0.11@12V Ohm","Maximum Gate Source Voltage":"\u00b120 V","Manufacturer":"International Rectifier"}...
1440 Bytes - 09:16:38, 17 September 2026
Irf.com/JANSG2N7269
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"26 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"104 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Vo...
1512 Bytes - 09:16:38, 17 September 2026

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
EADT9472691110.pdf0.031Request
EADT9472691010.pdf0.031Request
EADT9472691001.pdf0.051Request
PKR1726901_00.pdf0.651Request
TLE7269G.pdf0.701Request
EDOC1100387269.pdf6.371Request
1SDX007269R1.pdf0.071Request
1SDA072695R1.pdf0.591Request
1SAS057269S1200.pdf0.041Request
7GSP027269R0006.pdf0.091Request
1SDX257269R1.pdf0.061Request
1SDX237269R1.pdf0.061Request